The study investigates the design and fabrication of a micromachined radio frequency (RF) capacitive switch using the complementary metal oxide semiconductor-microelectromechanical system (CMOS-MEMS) technology. The structure of the micromachined switch is composed of a membrane, eight springs, four inductors, and coplanar waveguide (CPW) lines. In order to reduce the actuation voltage of the s...

Si nanophotonics is anticipated to play a critical role in the future ultra-compact system integration due to the maturity of sub-micron silicon complementary metal oxide semiconductor (CMOS) technology. Photonic crystals (PhCs) provide a promising platform for developing novel optoelectronic devices with significantly reduced device size and power consumption. The active control of photonic cr...

This article deals with the implementation of an adaptive fuzzy logic based reduced switch brushless DC motor drive. In topological view, cost system chiefly depends upon power semiconductor switches. Hence reduction concept is adapted in this paper. The operating principle, switching sequence formulation topology presented. An intelligent for BLDC drive designed and tested different load condi...

Induction heating (IH) technology is very popular in domestic applications because of its efficiency and safe operating properties. Resonant inverter circuits are widely used IH systems owing to their high soft-switching capability. Among the resonant inverters systems, single-switch quasi-resonant topology generally preferred for low-cost low-output-power applications. Despite advantage invert...

This paper proposes a novel nine switch converter based integrated power conditioner in place of conventional twelve switch converter based power conditioner for improving power quality. Space vector modulation scheme is proposed for producing gating signals for nine switch converter. In the proposed integrated power conditioner the nine-switch converter replaces shunt and series converters fou...

This paper reviews the various optical space switch structures on III–V semiconductor material. Their characteristics are discussed in the context of optical transport and switching network applications exploiting wavelength division multiplexing.

This report provides a summary of the Pulser In a Chip 9000-Discretionary LDRD. The program began in January of 1997 and concluded in September of 1997. The over-arching goal of this LDRD is to study whether laser diode triggered photoconductive semiconductor switches (PCSS) can be used to activate electro-optic devices such as Q-switches and Pockels cells and to study possible laser diode/ swi...

Wide bandgap power semiconductors such as SiC or GaN can safely operate at a junction temperature of 500°C. Such a high operating temperature range can substantially relax or completely eliminate the need for bulky and costly cooling components commonly used in silicon-based power electronic systems. However, a major limitation to fully realizing the potential of SiC and other wide band-gap sem...

Power semiconductor switching devices play an important role in the performance of high power wind energy generation systems. The state-of-the-art device choices in the wind power application as reported in the industry include IGBT modules, IGBT press-pack and IGCT press-pack. Because of significant deviation in the packaging structure, electrical characteristics, as well as thermal impedance,...