We report in-situ doping of polysilicon grown on glass substrates by a LPCVD process. The growth rate, the resistivity and the dopant concentration of boron in-situ doped polysilicon layers are studied as a function of the deposition pressure and the dopant gas to silane mole ratio. A dependence of the axial uniformity on pressure and B2H6/S1H4 mole ratio is put forward, and this effect appears...

The effect of nitrogen (N14) implant into dual-doped polysilicon gates was investigated. The electrical characteristics of sub-0.25m dual-gate transistors (both pand n-channel), MOS capacitor quasi-static C V curve, SIMS profile, poly-Si gate Rs, and oxide Qbd were compared at different nitrogen dose levels. A nitrogen dose of 5 10 cm 2 is the optimum choice at an implant energy of 40 KeV in te...

A new method is presented to fabricate out-of-plane microstructures using traditional planar micromachining technology. Composite LPCVD polysilicon/silicon nitride beams are fabricated to study this concept. Polysilicon films ranging from 0.5 μm to 1.3 μm, and silicon nitride films ranging from 150 to 450 nm, were used to fabricate various thickness ratios of composite out-of-plane microstructu...

The high aspect-ratio combined polyand single-crystal silicon micromachining technology (HARPSS) and its application to fabrication of precision MEMS inertial sensors are presented. HARPSS is a single wafer, all silicon, front-side release process which is capable of producing 10–100’s of microns thick, electrically isolated, 3-D polyand single-crystalline silicon microstructures with various s...

This paper presents the design, fabrication and characterization of CMOS (complementary metal oxide semiconductor) micromachined grippers with on-chip photo detectors placed beneath the gripping sites. The fabrication features a combination of metal wet etch and sacrificial polysilicon etch for structural release. The fabricated microstructure contains metal and dielectric layers, plus a polysi...

This paper proposes a Micro-electro-mechanical (MEMS) capacitive pressure sensor that relies on the movable electrode displaced like a flat plate equal to the maximum center deflection of diaphragm. The diaphragm, movable electrode and mechanical coupling are made of polysilicon, gold and Si3N4, respectively. The fixed electrode is gold and the substrate is Pyrex glass. This proposed method inc...