The present work considers electrothermal simulation of LDMOS devices and associated nonequilibrium effects. Simulations have been performed on three kinds of LDMOS: bulk Si, partial SOI and full SOI. Differences between equilibrium and nonequilibrium modeling approaches are examined. The extent and significance of thermal nonequilibrium is determined from phonon temperature distributions obtai...

In the literature frontal crashes typically have been classified as full, large overlap, or small overlap impacts (SOI) in accordance with the degree of frontal area involvement. These classifications implicitly refer to the degree of longitudinal structure engagement during impact. While full and large overlap impacts have received considerable attention, SOI has undergone limited analyses thr...

A correlation between the gated-diode R-G current and the performance degradation of SOI n-channel MOS transistor after F-N stress test has been demonstrated in this paper. Due to increase of interface traps after F-N stress test, the generation-recombination (R-G) current of the gateddiode in the SOI-MOSFET architecture increases while the performance characteristics of MOSFET transistor such ...

The southern oscillation index (SOI) is a characteristic of the El Niño phenomenon. SOI monthly averaged data is analyzed for the time interval 1866-2000. The tail of the cumulative distribution of the fluctuations of SOI signal is studied in order to characterize the amplitude scaling of the fluctuations and the occurrence of extreme events. Large fluctuations are more likely to occur than the...

Well-behaved Ge quantum well (QW) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) were fabricated on silicon-on-insulator (SOI) substrate. By optimizing the growth conditions, ultrathin fully strained Ge film was directly epitaxially grown on SOI at about 450 °C using ultra-high vacuum chemical vapor deposition. In situ Si2H6 passivation of Ge was utilized to form a high...

This paper describes the characteristics comparison of bulk FINFET and SOI FINFET. The scaling trend in device dimension require limit on short channel effect through the control of subthreshold slope and DIBL characteristics.It can be achieved by proper device design. The subthreshold characteristics are plotted with the variation of gate voltage for different doping profile .This paper also c...

1. Abstract We estimate the soft error rates of FD-SOI structures according to the thicknesses of BOX(Buird OXide) layers and body bias on 65-nm and 28-nm processes by reducing the supply voltage. A Monte-Carlo based simulation is used in this work. The parasitic bipolar effect is suppressed by thicker BOX on FD-SOI structure.The simulation results are consistent with the alpha and neutron irra...

The spin-orbit interaction (SOI) of a two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observe weak antilocalization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrate electric field control of the Rashba S...

Silicon-on-insulator (SOI) has been used as a platform for near-infrared photonic devices for more than twenty years. Longer wavelengths, however, may be problematic for SOI due to higher absorption loss in silicon dioxide. In this paper we report propagation loss measurements for the longest wavelength used so far on SOI platform. We show that propagation losses of 0.6-0.7 dB/cm can be achieve...