Hydrogen/deuterium was implanted in ^100& silicon to passivate dangling bonds at the Si/SiO2 interface when a thin oxide is grown on implanted silicon substrate. It was observed that implantation energy and dose influence the interface passivation. Measured interface states at the Si/SiO2 interface suggest an isotope effect where deuterium implanted devices yielded better interface passivation ...

While distributed systems with transfer of processes have become pervasive, methods for reasoning about their behaviour are underdeveloped. In this paper we propose a bisimulation technique for proving behavioural equivalence of such systems modelled in the higher-order π-calculus with passivation (and restriction). Previous research for this calculus is limited to context bisimulations and nor...

We show how to apply Howe’s method for the proof of congruence of early bisimilarities in a higher-order process calculus with passivation. This involves the introduction of a proof technique based on a new kind of transition system and bisimilarity, called complementary semantics. We show that complementary semantics is equivalent to contextual semantics, originally introduced by Sangiorgi, th...

We studied submicrometer (LG = 0.15−0.25 μm) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al2O3 passivation. The combination of a low-damage gate-recess technology and the low sheet resistance of the InAlN/AlN/GaN structure resulted in HEMTs with a maximum dc output current density of IDS,max = 1.5 A/mm and a record peak extrinsic transcond...

The study on graphene oxide (GO) grows rapidly in recent years. We find that graphene oxide could act as the passivation material in photovoltaic applications. Graphene oxide has been applied on Si two-different-metal solar cells. The suitable introduction of graphene oxide could result in obvious enhancement on the efficiency. The simple chemical process to deposit graphene oxide makes low the...

Silicon heterojunction solar cells have high opencircuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (aSi:H) layers deposited by plasma-enhanced chemical vapor deposition (PECVD). By using in-situ plasma diagnostics and ex-situ film characterization, we show that the best a-Si:H films for passivation are produced from deposition regimes clo...

Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF6 to form gaseous SiFx etch products, and 2) passivation with C4F8 that polymerizes as a protecting fluorocarbon deposit on the sidewalls and bottom of the etched features. In this work we report on a novel alternative and disruptive technology concept of Spatiallydivided ...