Motivated by the potentially large number of devices and simulations involved in optoelectronic system design, and the associated need for compact optoelectronic device models, we present a simple thermal model of vertical-cavity surface-emitting laser (VCSEL) light-current (LI) characteristics based on the laser rate equations and a thermal offset current. The model was implemented in conventi...

p-Type doping represents a key step towards III-nitride (InN, GaN, AlN) optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both materials and device aspects. In this article, we intend to discuss a small portion of these processes, focusing on the molecular beam epitaxy (MBE)-grown ...

Nanoscale materials are promising for optoelectronic devices because their physical dimensions are on the order of the wavelength of light. This leads to a variety of complex optical phenomena that, for instance, enhance absorption and emission. However, quantifying the performance of these nanoscale devices frequently requires measuring absolute absorption at the nanoscale, and remarkably, the...

Conjugated polymers are promising replacements for their inorganic counterparts in photovoltaics due to their low cost, ease of processing, and straightforward thin film formation. New materials have been able to improve the power conversion efficiency of photovoltaic cells up to 8%. However, rules for rational material design are still lacking, and subtle chemical structure variations usually ...

A novel scheme for the optical generation and coherent detection of tunable narrow-band far-infrared radiation in free space is described. This technique involves the optical heterodyning of two linearly chirped broadband pulses to produce a quasi-sinusoidal intensity modulation at tunable terahertz frequencies. The frequency content of the narrow-band terahertz radiation produced by mixing chi...

Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices. For many device applications, it is highly desirable to achieve not only high reflectivity and low absorption, but also good conductivity to allow effective electrical injection of charges. Here, we demonstrate the wafer-scale fabrication of highly reflective and conductive non-polar gall...

With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In...

The authors demonstrate 1.6 GHz surface acoustic wave SAW generation using interdigital transducers patterned by e-beam lithography on a thin ZnO piezoelectric film deposited on an InP substrate. The highly oriented, dense, and fine-grain ZnO film with high resistivity was deposited by radio frequency magnetron sputtering and was characterized by x-ray diffraction, scanning electron microscopy,...

A MoSe2/Si heterojunction photodetector is constructed by depositing MoSe2 film with vertically standing layered structure on Si substrate. Graphene transparent electrode is utilized to further enhance the separation and transport of photogenerated carriers. The device shows excellent performance in terms of wide response spectrum of UV-visible-NIR, high detectivity of 7.13 × 1010 Jones, and ul...

Sensitive pressure sensor with nitride membrane and optoelectronic read-out system is described. Measured pressure is transformed into thick layer nitride membrane deflection. Nitride membrane serves as a mirror for laser beam and can move reflected laser mark. Mark’s position is sensed using position sensing device – fotolateral diode. Diode double current signal is amplified and conditioned d...