With the decrease of the dimensions of electronic devices, the role played by electrical contacts is ever increasing, eventually coming to dominate the overall device volume and total resistance. This is especially problematic for monolayers of semiconducting transition-metal dichalcogenides (TMDs), which are promising candidates for atomically thin electronics. Ideal electrical contacts to the...

This work proposes a novel geometry field effect transistor with graphene as a channel-graphene field-effect transistor (GFET), having a hybrid contact that consists of an ohmic source/drain and its extended part towards the gate, which is capacitively coupled to the channel. The ohmic contacts are used for direct current (DC) biasing, whereas their capacitive extension reduces access region le...

A simplified version of the specific contact resistance measurement scheme of G. K. Reeves [Solid State Electronics 23, 487 (1980)] has been developed. Its applicability to semiconducting diamond is demonstrated using four sample types: epitaxial films doped to mid 1019 acceptors/cm3 on (100) and (110) type IIa substrates; type IIb diamonds 0.25 mm thick, and type IIb diamonds thinned to 0.035-...

We report electrical measurements of ' a sandwich structure consisting of a niobium electrode in contact with a thin lightly doped n type InGaAs layer. The bottom of the sandwich is a degenerate layer of n-type InGaAs used to collect the current. The semiconductor layers are grown by molecular beam epitaxy (MBB). These three layers are the essence of the proposed superconducting-base, semicondu...

Nickel is an excellent ohmic-contact metal on 4H-SiC. This paper discusses the formation mechanism of nickel ohmic contact 4H-SiC by assessing electrical properties and microstructural change. Under high-temperature annealing, phase nickel-silicon compound can be observed with X-ray diffraction, resistance also changes. A comparative experiment was designed to use diffraction energy-dispersive ...

Silver nanowires (AgNWs) have been successfully demonstrated to function as next-generation transparent conductive electrodes (TCEs) in organic semiconductor devices owing to their figures of merit, including high optical transmittance, low sheet resistance, flexibility, and low-cost processing. In this article, high-quality, solution-processed AgNWs with an excellent optical transmittance of 9...