نتایج جستجو برای: npn
تعداد نتایج: 445 فیلتر نتایج به سال:
Superharmonic injection locking is investigated in a new theoretical approach. Low power frequency dividers are designed using injection locked oscillators with cascode transistors. The Rockwell 0:5 m CMOS process is used to design a 3mW injection locked frequency divider in the 1800MHz frequency range. A 200MHz maximum locking range is achieved in simulations. 2SC3302 TOSHIBA NPN transistors a...
Noncovalently bound fluorescent probes have been used to study changes in the platelet which may occur during platelet aggregation. Platelets were exposed to either N-phenyl-naphthylamine (NPN) or 8-anilino-1-naphthalene-sulfonic acid (ANS). Both dyes were bound by the platelet, and platelet aggregation by collagen or thrombin was unaffected by the presence of the label. No change in fluorescen...
A measurement system comprised of an ultra-low-distortion function generator, lock-in amplifier, and semiconductor parameter analyzer is used for sensitive extraction of the smallsignal thermal impedance network of bipolar devices and circuits. The extraction procedure is demonstrated through measurements on several silicon-on-glass NPN test structures. Behavioral modeling of the mutual thermal...
میکروارگانیسمهای پروبیوتیک سبب بهبود تعادل فلور میکروبی روده گردیده و از رشد میکروارگانیسمهای مضر جلوگیری میکنند. در این تحقیق خصوصیات فیزیکوشیمیایی، درصد ازت غیرپروتئینی(NPN)، حسی و قابلیت زندهمانی میکروارگانیسمهای پروبیوتیک بکار رفته در پنیر چدار طی 60 روز نگهداری در دمای 8 درجهسانتیگراد مورد مطالعه قرار گرفت. چهار تیمار مطابق با طرح کاملا تصادفی شامل پنیر چدار حاوی g/cfu 108، لا...
nn nnnnnnnnnnn nn nt(;hnn* w’n =$n;hnn n$ e$?6’$"# $ %&’( $) *+, - nk&bnn#’nn$"n# $ n%&’n( $) *+, * dmua in * nn$2n * n, +jn.?b2$6’’dr! ! 1 #s* t(;h6’, d! f $ # * w nnq n n$ nbdnn>&npn* nn, =nq&n"&nnnq$n%? ,’n, d!n n!2 bn, [!$’28 7 !$ $* , . s# ’(=c ’(ne$ 6 n n nnn&n4) nnnn# n;hq! 2e$ 2$ 6 ’ ? 2e$ ...
A vertical npn bipolar transistor (BJT) which can be manufactured in a simple pwell CMOS process without additional process steps is described. The proposed BJT uses a p-well as base and an n+ S/D doping as emitter. The collector consists of the nsubstrate and does not require an nf buried layer or a highly doped substrate. The device is especially suitable for high-voltage applications in elec...
Studies have been performed on the effects of radiation on ASICs incorporating bipolar npn transistors in the AMS 0.8 μm BiCMOS process. Radiation effects are reviewed and the approach used to achieve radiation tolerant ASICs is described. The radiation tests required to validate the ASICs for use in the ATLAS detector at the CERN Large Hadron Collider are discussed. The results demonstrate tha...
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