This paper reviews some of the basic issues in homoepitaxial growth III-nitrides to enable a vertical device technology. It focuses on use metal organic chemical vapor deposition (MOCVD) grow GaN and explores effects native substrate characteristics material quality, interface composition, performance. A review theoretical work understanding dopants ultra-wide III-nitride semiconductors, AlN BN...

In a previous PRL, the authors found quantitative evidence that, despite hexagonal boron nitride ($h$-BN) having an indirect band gap, luminescence efficiency of high-quality crystals reaches level best direct semiconductors. Here, thanks to breakthrough experiments performed using original time-resolved cathodoluminescence setup, address root cause high quantum yield efficiency. These results ...

Efficient light generation on silicon is desirable for a variety of applications because of its low fabrication cost relative to III/V semiconductors and because it will enable monolithic integration with electronic components on the same Si platform. We studied silicon-rich silicon nitride with emission in the visible and erbium-doped silicon nitride (Er:SiNx) with emission at 1540 nm. Both of...

As a new kind of polymeric semiconductors, graphitic carbon nitride (g-C(3)N(4)) and its incompletely condensed precursors are stable up to 550 degrees C in air and have shown promising photovoltaic applications. However, for practical applications, their efficiency, limited e.g. by band gap absorption, needs further improvement. Here we report a "structural doping" strategy, in which phosphoru...

Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue lightemitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of highly efficient white LEDs has passed successful developments. A serious physical issue still remained, which prevents their use for high pow...