نتایج جستجو برای: nitride aluminum

تعداد نتایج: 64159  

Journal: :Optics letters 2016
Zhan Su Nanxi Li E Salih Magden Matthew Byrd P Purnawirman Thomas N Adam Gerald Leake Douglas Coolbaugh Jonathan D B Bradley Michael R Watts

We demonstrate an ultra-compact and low-threshold thulium microcavity laser that is monolithically integrated on a silicon chip. The integrated microlaser consists of an active thulium-doped aluminum oxide microcavity beside a passive silicon nitride bus waveguide, which enables on-chip pump-input and laser-output coupling. We observe lasing in the wavelength range of 1.8-1.9 μm under 1.6 μm re...

2012
Shivdev Singh Nirmal S Kalsi

This research work presents the results of an experimental investigation of cryogenically treated, coated and uncoated tungsten carbide cutting tool inserts in turning of AISI 1040 steel. Three different tungsten carbide inserts coated with aluminum chromium nitride (AlCrN), titanium nitride (TiN) and uncoated WC were taken and treated cryogenically. Experiments were performed to evaluate the c...

Journal: :Journal of the Ceramic Society of Japan 1992

2016
Jonathan D. B. Bradley Zhan Su E. Salih Magden Nanxi Li Matthew Byrd Thomas N. Adam Gerald Leake Douglas Coolbaugh Michael R. Watts

A key challenge for silicon photonic systems is the development of compact on-chip light sources. Thulium-doped fiber and waveguide lasers have recently generated interest for their highly efficient emission around 1.8 μm, a wavelength range also of growing interest to silicon-chip based systems. Here, we report on highly compact and low-threshold thulium-doped microcavity lasers integrated wit...

2005
Nikolaus Dietz Mustafa Alevli Hun Kang Martin Straßburg Vincent Woods Ian T. Ferguson Craig E. Moore Beatriz H. Cardelino

The growth of high-quality InN and indium rich group III-nitride alloys are of crucial importance for the development of high-efficient energy conversion systems, THz emitters and detectors structures, as well as for high-speed linear/nonlinear optoelectronic elements. However, the fabrication of such device structures requires the development of growth systems with overlapping processing windo...

2009
Babar BASHIR Joel JACQUET

Gallium Nitride (GaN) and its alloys with aluminum (AlxGa1-xN) and indium (InyGa1-yN & AlzIn1-zN) have gained lots of attention in optoelectronics research community in the last decade. These semiconductors relativity have a wide bandgap and easy to make n-type layers by Si doping and p-type layers by Mg doping. Consequently nitride alloys have proved to be very attractive candidate for the fab...

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