Nanocrystalline zinc oxides are produced by chemical vapor synthesis and characterized by x-ray diffraction, high resolution transmission electron microscopy, nitrogen sorption, and extended x-ray absorption fine structure. Dopant elements aluminum, gallium, and indium influence the particle size of the powders as well as lattice parameters and local structure. The different effects of the thre...

We present a two-dimensional simulation model for dopant diffusion in polysilicon, which includes dopant clustering in grain interiors as well as in grain boundaries. The grain growth model is coupled with the diffusion coefficient of the dopants and the process temperature. For all high dose implantation cases the trapping/emission mechanism in polysilicon and the grain growth are the major ef...

PURPOSE To prolong the degradation time of collagen membranes, various cross-linking techniques have been developed. For cross-linking, chemicals such as formaldehyde and glutaraldehyde are added to collagen membranes, but these chemicals could adversely affect surrounding tissues. The aim of this study is to evaluate the ability of porous non-chemical cross-linking porcine-derived collagen nan...

Sensor placement for 3-D modeling is a growing area of computer vision and robotics. The objective of a sensor placement system is to make task-directed decisions for optimal pose selection. This thesis proposes a Next Best View (NBV) solution to the sensor placement problem. Our algorithm computes the next best view by optimizing an objective function that measures the quantity of unknown info...

Medium energy ion scattering was used to study the distribution of ion-implanted Sb dopant in Si with excess vacancies and separation by implanted oxygen (SIMOX) substrates and the effects of thermal treatments. Extra vacancies in Si were generated by N or O pre-implantations at high temperature. Effects related to the different chemical nature of the pre-implanted species are expected under th...

The local structure of Mn-doped Li2B4O7(001) was investigated using extendedX-ray absorption fine structure (EXAFS) at the Mn K edge and electron paramagnetic resonance (EPR). The location of the Mn dopant in a lithium tetraborate crystal is consistent with occupation of a site with strong oxygen coordination. The Mn–O bond lengths are similar to those observed with Mn doping of the icosahedral...

We demonstrate a modulation of thermoelectric power factor via a radial dopant inhomogeneity in B-doped Si nanowires. These nanowires grown via vapor-liquid-solid (VLS) method were naturally composed of a heavily doped outer shell layer and a lightly doped inner core. The thermopower measurements for a single nanowire demonstrated that the power factor values were higher than those of homogeneo...

Off-axis electron holography is an electron microscopy-based technique that allows the electrostatic and magnetic fields in and around a specimen to be measured with nm-scale resolution. The continuous reduction in the size of semiconductor devices means that information about the distribution of strain fields and active dopants at a nanometre scale is required in order to understand how these ...

In this paper, we present a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on random dopant induced threshold voltage fluctuations and lowering in sub-100 nm MOSFETs. The simulations have been performed using a three-dimensional (3-D) implementation of the density gradient (DG) formalism incorporated in our established 3-D atomistic simulation ap...

Doped catalyst-free GaAs nanowires have been grown by molecular beam epitaxy with the gallium-assisted method. The spatial dependence of the dopant concentration and resistivity have been measured by Raman spectroscopy and four point electrical measurements. Along with theoretical considerations, the doping mechanisms have been revealed. Two competing mechanisms have been revealed: dopant incor...