نتایج جستجو برای: nanocarbon materials
تعداد نتایج: 436585 فیلتر نتایج به سال:
Electron transfer events involving single-walled carbon nanotubes (SWCNTs) play an integral role in a variety of applications, ranging from nanotube covalent functionalization to SWCNT-based photovoltaics. In the first part of this thesis, we explore ground-state electron transfer events, during the diazonium derivatization of carbon nanotubes, with the objective of modulating the extent of cov...
Combining two advanced layer-by-layer manufacturing techniques, low-temperature atomic layer deposition of MoS2 on a customizable 3D-printed nanocarbon surface, for photoelectrochemical energy conversion system.
Three-dimensional porous and defect-rich nitrogen-doped nanocarbon is successfully prepared by facile pyrolysis of crab shell-derived chitin nanofiber paper, delivering promising performance in both photosensing energy storage.
As renewable energy is becoming a critical source to meet the global demand, electrochemical storage devices become indispensable for efficient and reliable supply. The electrode material key factor determining capacity power delivery of devices. Carbon-based materials are emerging as viable candidate electrodes, yet their low densities impede development advanced materials. Nanoparticle decora...
We studied a nitrogen-doped nanocarbon film electrode with a nitrogen concentration of lower than 10.9 at% formed by the unbalanced magnetron (UBM) sputtering method. The sp(3) content in the nitrogen-doped UBM sputtering nanocarbon film (N-UBM film) slightly increases with increasing nitrogen concentration. The nitrogen-containing graphite-like bonding decreases and pyridine-like bonding incre...
New carbon forms exhibiting extraordinary physico-chemical properties can be generated from nanostructured precursors under extreme pressure. Nevertheless, synthesis of such fascinating materials is often not well understood that results, as the case C60 precursor, in irreproducibility results and impeding further progress design. Here semiconducting amorphous having bandgaps 0.1-0.3 eV advanta...
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