In the present paper we have done a comparative analysis of Dual Gate MOSFET having split gate architecture and conventional Dual Gate MOSFET architecture. Simulations have been performed using SILVACO-ATLAS tool, which shows significant improvement in characteristic of split gate architecture in comparison to the conventional structure. The split gate architecture consist two different materia...

This paper presents a nano-watt bandgap voltage reference (BGR). The self-cascode structure is provided as proportional-to-absolute-temperature (PTAT) voltage. Due to the low slope of PTAT voltage, divider consisting five similar MOSFET transistors presented. resulting output will be one-fifth complementary-to-absolute-temperature and four-fifths All MOSFETs are standard CMOS biased in sub-thre...

This paper presents an analytical subthreshold drain current model for pocket implanted nano scale nMOSFET. The model is developed by using the linear pocket profiles at the source and drain edges and by solving the Poisson's equation in the depletion region at the surface with the appropriate boundary conditions at source and drain for deriving the surface potential. The model includes the eff...

We experimentally evaluated the proton beam dose reproducibility, sensitivity, angular dependence and depth-dose relationships for a new Metal Oxide Semiconductor Field Effect Transistor (MOSFET) detector. The detector was fabricated with a thinner oxide layer and was operated at high-bias voltages. In order to accurately measure dose distributions, we developed a practical method for correctin...

This paper describes the detection principle of a hydrogen peroxide sensor based on the electrolyte metal oxide semiconductor field effect transistor (MOSFET) and possibilities of using different types of redox materials as the gate material for the sensor with respect to the sensitivity and detection limit. After discussing the fundamentals of hydrogen peroxide detection and a short descriptio...

This paper presents a new compact analytical model of the gate leakage current in high-k based nano scale MOSFET by assuming a two-step inelastic trap-assisted tunneling (ITAT) process as the conduction mechanism. This model is based on an inelastic trap-assisted tunneling (ITAT) mechanism combined with a semiempirical gate leakage current formulation in the BSIM 4 model. The gate tunneling cur...