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A new type of fluorescence sensory material with high sensitivity, selectivity, and photostability has been developed for vapor probing of organic amines. The sensory material is primarily based on well-defined nanofibers fabricated from an n-type organic semiconductor molecule, N-(1-hexylheptyl)perylene-3,4,9,10-tetracarboxyl-3,4-anhydride-9,10-imide. Upon deposition onto a substrate, the enta...

CuZnO (CZO) films have attracted increasing amounts of attention due to their promising potential applications in semiconductor devices. ZnO shows n-type conductivity, and attempts have been made to dope several elements in ZnO to improve the electrical properties. This study investigated the electrical property transitions of CZO films and determined the copper concentration at which the condu...

Compound semiconductor devices, as typified by laser diodes, photo diodes, and high electron mobility transistors, are used for optical communication systems, satellite communications, and cellular base stations to meet a growing demand for large-capacity and high-speed communication systems that play a key role in the infrastructure of modern society. The properties and reliability of semicond...

Abstract. This paper demonstrates the first 4H-SiC metal-semiconductor-metal (MSM) UV photodetector. Two types of MSM photodetectors are fabricated for comparison: one in p-type 4HSiC and the other in n-type 4H-SiC. The n-type SiC photodetectors show a low dark current less than 10nA at -15V bias while the p-type ones show a lower dark current of 0.3nA at -25V. Photoresponsivity is measured fro...

Ultra-thin p-type chalcogenide glass Ge2Sb2Te5 (GST) semiconductor layers are employed to form flexible thin-film transistors (TFTs). For the first time, TFTs based on GST show saturating output characteristics and an ON/OFF ratio up to 388, exceeding present reports by a factor of ~20. The channel current modulation is greatly enhanced by using ultra-thin 5 nm thick amorphous GST layers and 20...

The scaling of Silicon (Si) technology is approaching the physical limit, where various quantum effects such as direct tunnelling and quantum confinement are observed, even at room temperatures. We have measured standard Complementary Metal-Oxide-Semiconductor Field-Effect-Transistors (CMOSFETs) with wide and short channels at low temperatures to observe single electron/hole characteristics due...

We present a review of the emerging class of hybrid solar cells based on organic-semiconductor (Group IV, III-V), nanocomposites, which states separately from dye synthesized, polymer-metal oxides and organic-inorganic (Group II-VI) nanocomposite photovoltaics. The structure of such hybrid cell comprises of an organic active material (p-type) deposited by coating, printing or spraying technique...

Plasmonic metal Ag nanoparticles (AgNPs) on TiO2 thin films (AgNPs/TiO2) are a kind of excellent photocatalyst of high efficiency under visible light, and thus draw great interest nowadays. Further improvement of their photocatalytic activity (PA) is difficult but is of high importance for their applications. In this paper, oxygen plasma was taken to partially oxidize AgNPs deposited on the sur...

Silicon-Germanium Heterojunction Metal-Oxide-Semiconductor Field-EffectTransistors (SiGe HMOSFETs) have been successfully fabricated on Si substrate. The semiconductor heterostructure, which was grown by gas-source molecular beam epitaxy (GS-MBE), was initiated by the deposition of a Si0.7Ge0.3 “virtual substrate”. The n-type transistors were fabricated using a standard MOS process. The channel...