Abstract This research work designs a prototype of an active-loaded differential amplifier using Double-Gate (DG) MOSFETs. The following text outlines the design with testing in developing conceptual understanding and its requirement. designed model uses mathematical models while assessing possible limitations DG MOSFET. exhibits gain 4 V/V, bandwidth 1 MHz. common-mode output values were teste...

A quantum mechanical modeling framework for ultrathin body (UTB) device operating in the subthreshold and near-threshold regime is presented. For subthreshold conditions, we have assumed that the electrostatics is dominated by capacitive coupling between the body electrodes. Hence, the charge is neglected in Poisson equation, thus decoupling the quantum effects and electrostatics in the body. T...

For fast computation of drain current in Nano-MOSFET, we have developed a new backscattering model based on the accurate determination of ballistic and backscattering probabilities along the channel. The main elements of this model are deduced from careful analysis of transport in devices using Monte Carlo simulation. The backscattering coefficient is in very good agreement with the results of ...

Quantum mechanical (QM) effects are playing a significant role in MOSFET (metal-oxide-silicon field-effect transistor) device channel surface potential characteristics due to the ever shrinking feature size such as thin gate dielectric (below 4nm). An increase of the channel surface potential from the classical result due to the QM effects at strong inversion is reported in the simulation resul...

The characteristics of a typical 70nm high K gate dielectrics MOSFET with different source/drain structure including S/D lift-up structure are simulated by two dimensional device simulator. The impact of FIBL effect the gate dielectric permikttivity increasing to the characteristics of MOSFET is investigated. The simulation results shows that the degradation of MOSFET characteristics can be sup...

For low power circuits downscaling of MOSFET has a major issue of scaling of voltage which has ceased after 1V. This paper highlights comparative study and analysis of pocket double gate tunnel FET (DGTFET) with MOSFET for low standby power logic circuits. The leakage current of pocket DGTFET and MOSFET have been studied and the analysis results shows that the pocket DGTFET gives the lower leak...

Lowering both the threshold voltage (Vth) and subthreshold swing (S) at the same time is essentially required for O.1pm and below O.lym MOSFETs with low supply voltage. In this paper, we discuss a temperature scaling concept of MOSFET and the device characteristics of the fabricated 77K MOSFETs. In the temperature scaling concept, the physical quantities relating to potential are scaled with op...

In this paper, novel hybrid MOSFET(HMOS) structure has been proposed to reduce the gate leakage current drastically. This novel hybrid MOSFET (HMOS) uses source/drain-to-gate non-overlap region in combination with high-K layer/interfacial oxide as gate stack. The extended S/D in the non-overlap region is induced by fringing gate electric field through the high-k dielectric spacer. The gate leak...

The charge/discharge phenomenon of capacitance between terminals in a power MOSFET affects on its switching behavior of the device. The input capacitance is composed of the gate-source capacitance CGS and the gate-drain capacitance CGD, which vary with gate voltage VGS. This paper characterizes the relationship between the input capacitance of a SiC MOSFET and the gate voltage with considering ...