In this paper, the effect of gate tunneling current in ultra-thin gate oxide MOS devices of effective length (Le ) of 25 nm ( oxide thickness = 1 1 nm), 50 nm ( oxide thickness = 1 5 nm) and 90 nm ( oxide thickness = 2 5 nm) is studied using device simulation. Overall leakage in a stack of transistors is modeled and the opportunities for leakage reduction in the standby mode of operation are ex...

We present a new approach to construct several leakage-resilient cryptographic primitives, including leakage-resilient public-key encryption (PKE) schemes, authenticated key exchange (AKE) protocols and low-latency key exchange (LLKE) protocols. To this end, we introduce a new primitive called leakage-resilient non-interactive key exchange (LR-NIKE) protocol. We introduce a generic security mod...

Electromagnetic leakage will happen in working information equipments; it could lead to information leakage. In order to discover the nature of information in electromagnetic leakage, this paper combined electromagnetic theory with information theory as an innovative research method. It outlines a systematic model of electromagnetic information leakage, which theoretically describes the process...

Power has been an important issue for the present day microelectronic circuits of Soc designs. In the entire phase of design controlling power and dealing with power dissipation is very important. There are six leakage components in a MOS transistor. About 50 % of the total power consumption is through leakage components alone. Out of this 40 % power dissipation is through transistors.Out of th...

Leakage model plays a very important role in side channel attacks. An accurate leakage model greatly improves the efficiency of attacks. However, how to profile a ”good enough” leakage model, or how to measure the accuracy of a leakage model, is seldom studied. Durvaux et al. proposed leakage certification tests to profile ”good enough” leakage model for unmasked implementations. However, they ...

Leakage power reduction is extremely important in the design of scaled CMOS logic circuits. The dominant leakage components of such circuits are the sub threshold leakage and the thin-oxide gate leakage. This paper describes an efficient leakage reduction method that considers both these components, and is based on the selective insertion of control points. The selection is based on the leakage...

statement of problem: hemostatic agents may affect the micro-leakage of different adhesive systems. also, chlorhexidine has shown positive effects on micro-leakage. however, their interaction effect has not been reported yet. objectives: to evaluate the effect of contamination with a hemostatic agent on micro- leakage of total- and self-etching adhesive systems and the effect of chlorhexidine a...

Leakage current is an important qualitative metric of LSI (Large Scale Integrated circuit). In this paper, we focus on reduction of leakage current variation under the process variation. Firstly, we derive a set of quadratic equations to evaluate delay and leakage current under the process variation. Using these equations, we discuss the cases of varying leakage current without degrading delay ...

In this paper, we propose a methodology for calculating on-chip temperature gradient and leakage power distributions. It considers the interdependence between leakage power and local temperature using a general circuit simulator as a differential equation solver. The proposed methodology can be utilized in the early stages of the design cycle as well as in the final verification phase. Simulati...