The experimental results of the recent years on synthesis semipolar wide-band III-N layers a nanostructured silicon substrate are summarized. idea involves formation Si(111) side walls surface, then epitaxial nucleation layer in “c” direction crystal, followed by fusion blocks surface. Examples orientation controlling epitaxy AlN(10-11), GaN(10-11), GaN(11-22) synthesized Si(100), Si(113) subst...