Deposition rates, wet etch rates, and thickness uniformity experiments were performed using O3/TEOS thermal chemical-vapor deposition. Our results for oxide deposition show optimum process window around 200 Torr for producing films of good quality ~uniformity and material properties!. This is in excellent agreement with the modeling predictions over a broad range of pressure ~100–600 Torr! and ...

Characterization and Performance of LiFePO4 Thin-Film Cathodes Prepared with Radio-Frequency Magnetron-Sputter Deposition Jian Hong,* Chunsheng Wang,** Nancy J. Dudney,** and Michael J. Lance Department of Chemical Engineering, Tennessee Technological University, Cookeville, Tennessee 38505, USA Department of Chemical and Biochemical Engineering, University of Maryland, College Park, Maryland 2...

(I) CHROMATOGRAPHIC METHODS FOR SOLUTE DESCRIPTORDETERMINATIONS(II) RUTHENIUM SUBSTRATE-CATALYZED GROWTH OF NICKEL NITRIDETHIN FILMS BY ATOMIC LAYER DEPOSITION

Phase Transitions and High-Voltage Electrochemical Behavior of LiCoO2 Thin Films Grown by Pulsed Laser Deposition H. Xia, L. Lu, Y. S. Meng, and G. Ceder* Advanced Materials for Microand Nano-System, Singapore-MIT Alliance, Singapore 117576 Department of Mechanical Engineering, National University of Singapore, Singapore 117576 Department of Materials Science and Engineering, Massachusetts Inst...

We present a comparison of models describing the pyrolytic deposition of SiO2 with a low pressure chemical vapor deposition process. In order to meet industrial simulation requirements, e.g. accuracy and fast delivery of results, we present an overview of established and new models, their use within TCAD applications, and their best results which have been obtained by calibrations according to ...

3 Preface 4 List of publications 5 List of symbols and abbreviations 6