by Hemraj Singh Sodhi Submitted to the Department of Electrical Engineering and Computer Science in partial fulfillment of the requirements for the degree of Master of Electrical Engineering and Computer Science at the MASSACHUSETTS INSTITUTE OF TECHNOLOGY May 1996 © 1996 Massachusetts Institute of Technology. The author hereby grants permission to MIT to reproduce and distribute publicly paper...

The properties of HBTs, HEMTs, PHEMTs and MESFETs are reviewed and discussed in the context of their suitability for various applications. Noise, power and high frequency performance is reviewed and the physical mechanisms dictating their values are discussed. The reliability characteristics of the devices are discussed and system applications are reported.

The irradiation effect of X-ray on the electrical properties Schottky-barrier diode (SBD) and metal-semiconductor field-effect transistors (MESFET) based surface conductivity hydrogen-terminated single-crystal diamond (SCD) epilayers was investigated. Ohmic contact formed by a Pd/Ti/Au multilayer Schottky metal Al thin film for fabrication SBDs MESFETs. performed with dose 100 kGy. It observed ...

We demonstrate a passivated MESFET fabricated on (010) Si-doped $\beta $ -Ga 2 O xmlns:xlink="http://www.w3.org/1999/xlink">3 with breakdown over 2.4 kV without field plates,...

Article history: Received 8 December 2008 Received in revised form 2 February 2009 Available online 22 April 2009 0026-2714/$ see front matter 2009 Elsevier Ltd. A doi:10.1016/j.microrel.2009.03.005 * Corresponding author. Tel.: +91 4

This paper describes the design and implementation of a high-speed Interconnect Network (ICN) for a Multiprocessor System using ternary logic. By using ternary logic and a fast point-to-point communication technique called STARI (Self Timed At Receiver's Input), the communication between the processors is free of clock skew and insensitive to any delay differences in buffers and wires. In addit...