Spintronic devices currently rely on magnetization control by external magnetic fields or spin-polarized currents. Developing temperature-driven magnetization control has potential for achieving enhanced device functionalities. Recently, there has been much interest in thermally induced magnetisation switching (TIMS), where the temperature control of intrinsic material properties drives a deter...

Tunneling anisotropic magnetoresistance in a magnetic tunnel junction with half-metallic electrodes" (2016). Evgeny Tsymbal Publications. 53. Tunneling anisotropic magnetoresistance (TAMR) is the difference in resistance of a magnetic tunnel junction due to a change in magnetization direction of one or both magnetic electrodes with respect to the flow of current. We present the results of first...

Ordered CoNiP nanowires with the same length of 4 µm and varying diameters (d = 100 nm-600 nm) were fabricated by electrodeposition of CoNiP onto polycarbonate templates. X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy confirmed the quality of the fabricated nanowires. Magnetic measurements and theoretical analysis revealed that the magnetiz...

Magnetic data storage technology and the everincreasing speed of information processing have brought enormous changes to our daily life. These developments naturally lead us to ask if there is a physical limit to the speed at which magnetic moments can be switched [1]—a topic that has caused no shortage of controversy in the scientific community. Exploring this limit is complicated, partly beca...

Recent progress in magnetic tunnel junctions (MTJs) with a perpendicular easy axis consisting of CoFeB and MgO stacking structures has shown that magnetization dynamics are induced due to voltage-controlled magnetic anisotropy (VCMA), which will potentially lead to future low-power-consumption information technology. For manipulating magnetizations in MTJs by applying voltage, it is necessary t...

Single crystals were grown in order to investigate the low temperature magnetic properties of URu.41 and URhAl. Both compounds show huge magnetocrystalline anisotropy with the c direction as the easy axis. High field magnetization as well as susceptibility measurements both in the basal plane and along the c axis are presented.

We report selective and directional actuation of elastomer films utilizing magnetic anisotropy introduced by chains of Fe3O4 magnetic nanoparticles (MNPs). Under uniform magnetic fields or field gradients, dipolar interactions between the MNPs favor magnetization along the chain direction and cause selective lifting. This mechanism is described using a simple model.

Within a wide class of ferromagnetic and antiferromagnetic systems, quantum tunneling of magnetization direction is spin-parity dependent: it vanishes for magnetic particles with half-integer spin, but is allowed for integer spin. A coherent-state path integral calculation shows that this topological effect results from interference between tunneling paths.

Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p − n diode and the bipolar (junction) transistor. Such devices may be applicable for magnetic sensing, nonvolatile memory, and reprogrammable logic.