In the framework of fundamentals of smart materials and structures, a proper mathematical modeling of electro-kinetic transport phenomena in micro-structures adhering to the law of conservation of mass is suggested. The reference multiphase medium is described by a nonlinear Poisson–Nernst–Planck model stated in a heterogeneous pore-particle space disjoint by the interface. For physical consist...

The solvation of charge at the interface between an aqueous phase and hydrophobic medium is a key question in the mechanism of a wide range of biomolecular processes. These studies report the direct measurement of the molecular properties of water surrounding an isolated charge at an oil/water interface, and show how the solvating water structure changes with progressive charge build-up. At tra...

Air-aqueous sodium halide solution interfaces are examined using vibrational sum frequency generation spectroscopy. Raman and ATR-FTIR (attenuated total reflection Fourier transform infrared) spectroscopies are also used to compare the effects of halide anions on the water structure of the bulk solution to that of the interface. The interfacial water structures for the sodium fluoride and chlor...

Finite element approximations of positive weak solutions to a onephase unidimensional moving-boundary system with kinetic condition describing the penetration of a sharp-reaction interface in concrete are considered. A priori and a posteriori error estimates for the semi-discrete fields of active concentrations and for the position of the moving interface are obtained. The important feature of ...

Abstract Heteroepitxy of group IV materials (Si, SiGe, and Ge) has great potential for boosting Si-based novel device performance because the possibility strain, band gap/Fermi-level engineering, applying emerging artificial such as a superlattice (SL) nanodots. In order to control heteroepitaxy processes, interface, surface energies are very essential parameters. They affect dislocation format...

the surface and interfacial analysis of silicon oxide film on silicon substrate is particularly crucial in the nano-electronic devices. for this purpose, series of experiments have been demonstrated to grow oxide film on si (111) substrate. then these films have been used to study the structure of the film by using x-ray photo emission spectroscopy (xps) technique. the obtained results indicate...

there are two methods for identifying formation interface in oil wells: core analysis, which is a precise approach but costly and time consuming, and well logs analysis, which petrophysists perform, which is subjective and not completely reliable. in this paper, a novel coupled method was proposed to detect the formation interfaces using gr logs. second approximation level (a2) of gr log gained...

The refraction phenomenon at the interface of an ordinary material and a lossy metamaterial has been investigated. For oblique incidence on the lossy metamaterial, the planes of constant amplitude of the refracted wave are parallel to the interface and the plane of constant phases make a real angle with the interface (real refraction angle). The real refraction angle and hence, the real refract...

Steady-state recombination-generation-trapping of holes and electrons at one-electron neutral traps (charge states 0 and −1) located at the SiO2/Si interface is employed to investigate the effects of high concentration of interface traps on the recombination dc base-terminal current vs gate-voltage (R-DCIV or IB-VGB) and gate capacitance vs gate-voltage (CV or Cgb-VGB) properties of inversion n...