By using a combination of detailed experimental studies and simple theoretical arguments, we identify a novel mechanism characterizing the hopping transport in the Mott insulating phase of Ca2-xSrxRuO4 near the metal-insulator transition. The hopping exponent alpha shows a systematic evolution from a value of alpha=1/2 deeper in the insulator to the conventional Mott value alpha=1/3 closer to t...

Transistor designs based on using mixed -L valleys for electron transport are proposed to overcome the density of states bottleneck while maintaining high injection velocities. Using a self-consistent top-of-the-barrier transport model, improved current density over Si is demonstrated in GaAs/AlAsSb, GaSb/AlAsSb, and Ge-on-insulator-based singlegate thin-body n-channel metal–oxide–semiconductor...

Hopf insulators are characterized by a topological invariant called the Hopf index which classifies maps from three-sphere to two-sphere, instead of a Chern number or a Chern parity. In contrast to a topological insulator, the Hopf insulator is not protected by any kind of symmetry. By dimensional reduction, we argue that there exists a new type of Z(2) index for 2D Hamiltonian with a vanishing...

The theory of the 2k F and 4k F instabilities in quarter-lled band organic conductors is revisited. The phase angles of the 2k F bond and charge density waves are shown to change as electron correlation is turned on, and this switching of the phase angle is critical for understanding the bond distortion patterns in the real materials. Intersite Coulomb interactions in the real materials must be...

Insulator-based dielectrophoresis can be used to manipulate biological particles, but has thus far found limited practical applications due to low sensitivity. We present linear sweep three-dimensional insulator-based dielectrophoresis as a considerably more sensitive approach for strain-level discrimination bacteria. In this work, linear sweep three-dimensional insulator-based dielectrophoresi...

The evolution from an anomalous metallic phase to a Mott insulator within the two-dimensional Hubbard model is investigated by means of the cellular dynamical mean-field theory. We show that approaching the density-driven Mott metal-insulator transition the Fermi surface is strongly renormalized and the quasiparticle description breaks down in a very anisotropic fashion. Regions where the quasi...

We prove that there exists a class of crystalline insulators, which we call "fragile Mott insulators," which are not adiabatically connected to any sort of band insulator provided time-reversal and certain point-group symmetries are respected, but which are otherwise unspectacular in that they exhibit no topological order nor any form of fractionalized quasiparticles. Different fragile Mott ins...