نتایج جستجو برای: inp materials
تعداد نتایج: 439988 فیلتر نتایج به سال:
در این پایان نامه در ابتدا ساختار لایه و ناخالصی یک لیزر مبتنی بر مواد inp/ingaasp و ساختار بالک را بررسی و تحلیل نموده ایم. در این ساختار لایه ingaasp به عنوان لایه فعال و لایه های inp با ناخالصی تدریجی به عنوان لایه های تحدید استفاده شدند. این لیزر درطول موج µm 55/1 تشعشع خواهد داشت. سپس بجای لایه فعال ingaasp از سه جفت لایه inp/ingaas چاه کوانتومی استفاده گردید. ساختار جدید نشان می دهد که مش...
The thin-film vapor−liquid−solid (TF-VLS) growth technique presents a promising route for high quality, scalable, and cost-effective InP thin films for optoelectronic devices. Toward this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referre...
Significant progress has been made recently in demonstrating that silicon photonics is a promising technology for low-cost optical detectors, modulators and light sources1–12. It has often been assumed, however, that their performance is inferior to InP-based devices. Although this is true in most cases, one of the exceptions is the area of avalanche photodetectors, where silicon’s material pro...
InP nanocrystals are promising fluorescent semiconductor materials in the future environmentally friendly society. In article number 2300425, Huan Liu, Tingchao He, Rui Chen, and co-workers review optical properties of nanocrystals, including absorption, fluorescence, carrier dynamics, nonlinear optics. The relevant applications based on also presented, ranging from light emitting diodes, bioim...
Impressive microwave results have been published for both Single(SHBT) and Double(DHBT) Heterostructure Bipolar Transistors based upon the InP material system. InP-based SHBTs have been reported to have excellent high-frequency performances such as unity current-gain frequency (fT) of 200 GHz (1) and maximum oscillation frequency (fmax) of 236 GHz (2). The best results for InP-based DHBTs inclu...
The utilisation of crystalline semiconductor materials as detectors and devices operating in high radiation environments, at the future particle colliders, in space applications, in medicine and industry, makes necessary to obtain radiation harder materials. Diamond, SiC and different A III B V compounds (GaAs, GaP, InP, InAs, InSb) are possible competitors for silicon to different electronic d...
A high performance InP/InGaAs SHBT technology will be presented. InP SHBT is advantageous in terms of low-cost monolithic integration with photodiodes for high-speed optical receiver frontend applications. We will demonstrate that, through optimized CAD geometries, the fabricated HBTs showed uniform and improved device performance. Our best results show that an fT of over 160 GHz and fmax of gr...
Fig. 1. Cross-section of self-aligned base-emitter junction from Teledyne 500nm HBT process [6] InP-based transistor technologies, both high electron mobility transistors (HEMTs) and double heterojunction bipolar transistors (DHBTs), have demonstrated the highest reported transistor RF figures-of-merit. Both device technologies have been reported with current gain cutoff frequencies (ft) in exc...
InP-based quantum dots (QDs) have attracted much attention for use in optical applications, and several types of QDs such as InP/ZnS, InP/ZnSeS, and InP/GaP/ZnS have been developed. However, early synthetic methods that involved rapid injection at high temperatures have not been able to reproducibly produce the required optical properties. They were also not able to support commercialization ef...
InP thin films have been grown on InP/Si substrate by epitaxial lateral overgrowth (ELOG). The nature, origin and filtering of extended defects in ELOG layers grown from single and double openings in SiO2 mask have been investigated. Whereas ELOG layers grown from double openings occasionally exhibit threading dislocations (TDs) at certain points of coalescence, TDs are completely absent in ELO...
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