نتایج جستجو برای: inp materials

تعداد نتایج: 439988  

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه کاشان - دانشکده برق و کامپیوتر 1393

در این پایان نامه در ابتدا ساختار لایه و ناخالصی یک لیزر مبتنی بر مواد inp/ingaasp و ساختار بالک را بررسی و تحلیل نموده ایم. در این ساختار لایه ingaasp به عنوان لایه فعال و لایه های inp با ناخالصی تدریجی به عنوان لایه های تحدید استفاده شدند. این لیزر درطول موج µm 55/1 تشعشع خواهد داشت. سپس بجای لایه فعال ingaasp از سه جفت لایه inp/ingaas چاه کوانتومی استفاده گردید. ساختار جدید نشان می دهد که مش...

2016
Hsin-Ping Wang Carolin M. Sutter-Fella Peter Lobaccaro Mark Hettick Maxwell Zheng Der-Hsien Lien D. Westley Miller Charles W. Warren Ellis T. Roe Mark C. Lonergan Harvey L. Guthrey Nancy M. Haegel Joel W. Ager Carlo Carraro Roya Maboudian Jr-Hau He Ali Javey

The thin-film vapor−liquid−solid (TF-VLS) growth technique presents a promising route for high quality, scalable, and cost-effective InP thin films for optoelectronic devices. Toward this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referre...

2008
Yimin Kang Han-Din Liu Mike Morse Mario J. Paniccia Moshe Zadka Stas Litski Gadi Sarid Alexandre Pauchard Ying-Hao Kuo Hui-Wen Chen Wissem Sfar Zaoui John E. Bowers Andreas Beling Dion C. McIntosh Xiaoguang Zheng Joe C. Campbell

Significant progress has been made recently in demonstrating that silicon photonics is a promising technology for low-cost optical detectors, modulators and light sources1–12. It has often been assumed, however, that their performance is inferior to InP-based devices. Although this is true in most cases, one of the exceptions is the area of avalanche photodetectors, where silicon’s material pro...

Journal: :Advanced Optical Materials 2023

InP nanocrystals are promising fluorescent semiconductor materials in the future environmentally friendly society. In article number 2300425, Huan Liu, Tingchao He, Rui Chen, and co-workers review optical properties of nanocrystals, including absorption, fluorescence, carrier dynamics, nonlinear optics. The relevant applications based on also presented, ranging from light emitting diodes, bioim...

1999
D. Sawdai

Impressive microwave results have been published for both Single(SHBT) and Double(DHBT) Heterostructure Bipolar Transistors based upon the InP material system. InP-based SHBTs have been reported to have excellent high-frequency performances such as unity current-gain frequency (fT) of 200 GHz (1) and maximum oscillation frequency (fmax) of 236 GHz (2). The best results for InP-based DHBTs inclu...

2000
I. Lazanu S. Lazanu

The utilisation of crystalline semiconductor materials as detectors and devices operating in high radiation environments, at the future particle colliders, in space applications, in medicine and industry, makes necessary to obtain radiation harder materials. Diamond, SiC and different A III B V compounds (GaAs, GaP, InP, InAs, InSb) are possible competitors for silicon to different electronic d...

2002
Shyh-Chiang Shen David C. Caruth Milton Feng

A high performance InP/InGaAs SHBT technology will be presented. InP SHBT is advantageous in terms of low-cost monolithic integration with photodiodes for high-speed optical receiver frontend applications. We will demonstrate that, through optimized CAD geometries, the fabricated HBTs showed uniform and improved device performance. Our best results show that an fT of over 160 GHz and fmax of gr...

2011
M. Urteaga R. Pierson J. Bergman D.-H. Kim P. Rowell B. Brar M. Rodwell

Fig. 1. Cross-section of self-aligned base-emitter junction from Teledyne 500nm HBT process [6] InP-based transistor technologies, both high electron mobility transistors (HEMTs) and double heterojunction bipolar transistors (DHBTs), have demonstrated the highest reported transistor RF figures-of-merit. Both device technologies have been reported with current gain cutoff frequencies (ft) in exc...

2016
Joong Pill Park Jae-Joon Lee Sang-Wook Kim

InP-based quantum dots (QDs) have attracted much attention for use in optical applications, and several types of QDs such as InP/ZnS, InP/ZnSeS, and InP/GaP/ZnS have been developed. However, early synthetic methods that involved rapid injection at high temperatures have not been able to reproducibly produce the required optical properties. They were also not able to support commercialization ef...

2013
Carl Junesand Himanshu Kataria Wondwosen Metaferia Nick Julian Zhechao Wang Yan- Ting Sun John Bowers Galia Pozina Lars Hultman Sebastian Lourdudoss Yan-Ting Sun

InP thin films have been grown on InP/Si substrate by epitaxial lateral overgrowth (ELOG). The nature, origin and filtering of extended defects in ELOG layers grown from single and double openings in SiO2 mask have been investigated. Whereas ELOG layers grown from double openings occasionally exhibit threading dislocations (TDs) at certain points of coalescence, TDs are completely absent in ELO...

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