Micro-size light emitting diode (μLED) arrays based on III-nitride semiconductors have emerged as a promising technology for a wide range of applications. If InGaN μLED arrays can be integrated on to Si complementary metal–oxide–semiconductor (CMOS) substrates for active driving, these devices could play crucial roles in ultra-portable products such as next generation pico-projectors, as well a...

Epitaxial lateral overgrowth of gallium nitride with 1 1 2̄ 2 facets was realized by metal organic chemical vapor deposition on GaN/ sapphire (0 0 0 1) substrates with SiO2 stripe mask. After wet etching of the mask, periodic multiple quantum wells (MQWs) InGaN/GaN structures were grown on the whole surface. Cross-sectional transmission electron microscopy (TEM) showed that a higher growth rate ...

We report on the experimental investigation of the potential of InGaN alloys as thermoelectric (TE) materials. We have grown undoped and Si-doped In0.3Ga0.7N alloys by metalorganic chemical vapor deposition and measured the Seebeck coefficient and electrical conductivity of the grown films with the aim of maximizing the power factor (P). It was found that P decreases as electron concentration (...

Properties of the quantum noise and the optical feedback noise in blue-violet InGaN semiconductor lasers were measured in detail. We confirmed that the quantum noise in the blue-violet laser becomes higher than that in the near-infrared laser. This property is an intrinsic property basing on principle of the quantum mechanics, and is severe subject to apply the laser for optical disk with the s...

Here, we report highly efficient InGaN-based red light-emitting diodes (LEDs) grown on conventional c-plane-patterned sapphire substrates. An InGaN single quantum well active layer provides the spectral emission. The 621-nm-wavelength LEDs exhibited high-purity emission with a narrow full-width at half-maximum of 51 nm. packaged LED’s external efficiency, light-output power, and forward voltage...

InGaN epilayers with different indium concentrations have been grown on 100-nm-thick AlN/n-Si(111) template using plasma assisted molecular beam epitaxy.

A key issue in a single photon source is fast and efficient generation of a single photon flux with high light extraction efficiency. Significant progress toward high-efficiency single photon sources has been demonstrated by semiconductor quantum dots, especially using narrow bandgap materials. Meanwhile, there are many obstacles, which restrict the use of wide bandgap semiconductor quantum dot...

The Georgia Tech team developed state-of-the-art GaN heterojunction bipolar transistor (HBT) technology in this NSF program. Throughout the project period, baseline device fabrication and material growth techniques were actively studied and significant technological advancement was achieved in III-Nitride (III-N) HBT research. We successfully demonstrated high-current gain (> 100) InGaN HBT on ...

Surface chemical states of GaN, AlGaN and InGaN by metalorganic chemical vapor deposition, and the influence of different dopants are studied with X-ray Photoelectron Spectroscopy (XPS). The results show that for most of the samples the N 1s peak can be fitted with a dominant GaN peak and a small N–H peak, while Ga 3d can be deconvoluted into three peaks from elemental Ga, GaN and Ga2O3. Si-dop...

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel–Kramers– Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN / In0.33Ga0.67N /n-GaN heterostructure tunnel diodes were grown using molecular ...