نتایج جستجو برای: indium 111 111in
تعداد نتایج: 39047 فیلتر نتایج به سال:
The morphological phase diagram is reported for InP nanostructures grown on InP (111)B as a function of temperature and V/III ratio. Indium droplets were used as the catalyst and were generated in situ in the metalorganic vapor-phase epitaxy reactor. Three distinct nanostructures were observed: wires, cones, and pillars. It is proposed that the shape depends on the relative rates of indium phos...
Using a strain-rosette, we demonstrate the existence of transverse strain using time-resolved x-ray diffraction from multiple Bragg reflections in laser-excited bulk gallium arsenide. We find that anisotropic strain is responsible for a considerable fraction of the total lattice motion at early times before thermal equilibrium is achieved. Our measurements are described by a new model where the...
Phosphasalen Indium Complexes Showing High Rates and Isoselectivities in rac‐Lactide Polymerizations
Polylactide (PLA) is the leading bioderived polymer produced commercially by the metal-catalyzed ring-opening polymerization of lactide. Control over tacticity to produce stereoblock PLA, from rac-lactide improves thermal properties but is an outstanding challenge. Here, phosphasalen indium catalysts feature high rates (30±3 m-1 min-1 , THF, 298 K), high control, low loadings (0.2 mol %), and ...
Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting.
Properties that can now be achieved with advanced, blue indium gallium nitride light emitting diodes (LEDs) lead to their potential as replacements for existing infrastructure in general illumination, with important implications for efficient use of energy. Further advances in this technology will benefit from reexamination of the modes for incorporating this materials technology into lighting ...
Anhydrous indium trichloride reacts with [2-(Ph2P)C6H4]2PPh (TP) in the molar ratio 2:1 to give an ionic complex [(TP)InCl2]+ InCLin almost quantitative yield. The structure of the product has been determined by a single crystal X-ray diffraction study. In the cation the TP molecule acts only as a bidentate ligand via its two terminal phosphorus atoms [In-Pl 2.5956(8), In-P2 2.5799o(7) A], Alth...
The synthesis and spectroscopic characterization of new axially ligated indium(III) porphyrin complexes were reported. Chloroindium(III) porphyrin (TPPIn-Cl) was obtained in good yield by treating the corresponding free base with indium trichloride. The action of the different phenols on chloroderivatives (TPPIn-Cl) led to the corresponding phenolato complexes (TPPIn-X). These derivatives were ...
We address the inherent high-field magnetoresistance sMRd of indium antimonide epilayers on GaAs s001d, studying the modification of the MR when processed into a set of geometries. The changes produced by the geometries are quite subtle. The extraordinary MR geometry produces the highest low-field MR while the Corbino geometry produces the largest high-field magnetoresistance. We demonstrate th...
This paper describes a high-efficiency, spectrum-splitting photovoltaic module that uses an off-axis volume holographic lens to focus and disperse incident solar illumination to a rectangular shaped high-bandgap indium gallium phosphide cell surrounded by strips of silicon cells. The holographic lens design allows efficient collection of both direct and diffuse illumination to maximize energy y...
Antibodies with bound metal-chelate haptens provide new means for exploiting the diverse properties of metallic elements. The murine monoclonal antibody CHA255 (IgG1 lambda) binds the metal-chelate hapten indium (III)-4-[N'-(2-hydroxyethyl)thioureido]-L-benzyl-EDTA (designated In-EOTUBE) with high affinity (K(a) = 1.1 x 10(10) M-1). Antibody binding is highly specific for the indium chelate; th...
The wide-bandgap semiconducting material, zinc sulfide, has been coated on indium phosphide nanoclusters to a 1-2-Å thickness. The resulting InP-ZnS core-shell particle (as shown in the TEM image; scale 1 cm=5 nm) exhibits bright luminescence at room temperature with quantum efficiencies as high as 23 %.
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