This paper outlines recent developments in two dominant classes of Silicon Carbide based switches – the Super Junction Transistor (SJT) for 1.2kV-6.5kV pulse width modulated switching; and Thyristors for >6.5kV cycloconverter and pulsed power operation. The high-temperature (> 200 °C) blocking voltage, on-state and switching performance of recently fabricated 1200 V-class, 4H-SiC Super Junction...

High electric field effect in very small pseudomorphic High Electron Mobility Transistor (HEMT) A10.22Gao.78AslIn0.2Gag.gAs/GaAs and their influence at low temperature are investigated for O.1pm up to 0 . 4 ~ gate lengths. The extent of transport improvement at low temperature and performance degradation associated with gate length reduction are underlined. Limitations in performance improvemen...

this paper aims at finding the long term coupled effect of high temperature and constant high relative humidity on the corrosion rehabilitated patches of chloride contaminated steel reinforced concrete. this paper is an extension of previous research in which the authors experimentally corroborated re-corrosion in the repaired reinforced concrete (rc) patches in the form of macro-cells. in prev...

We demonstrate an AlN/AlGaN high-electron-mobility transistor (HEMT) fabricated on a free-standing AlN substrate. A metal stack, composed of Zr/Al/Mo/Au, was found to show low contact resistivity for source and drain ohmic contacts. The fabricated AlN/AlGaN HEMT exhibited a maximum drain current of 38 mA/mm with a threshold voltage of -3.4 V. Negligible drain current degradation was observed at...

In this abstract we present a novel "spirit level"-sensor derived from a well-known thermal flow-sensor. The operation principle is based on the temperature difference of two identical heaters, caused by buoyancy of air. Heating as well as temperature sensing of the structures is carried out using temperature dependent platinum resistors. Due to its simplicity the sensor is easily fabricated in...

This paper focuses on using high temperature operating capability of SiC power devices, which are packaged in power modules. A SiC Schottky barrier diode is mounted on an active metal brazed Si3N4 substrate as a heat resistive power module. The temperature dependency of electrical characteristics of the SiC device and thermal dynamics of the power module are modeled for numerical electro therma...

This Letter presents an all-optical high-temperature flow sensor based on hot-wire anemometry. High-attenuation fibers (HAFs) were used as the heating elements. High-temperature-stable regenerated fiber Bragg gratings were inscribed in HAFs and in standard telecom fibers as temperature sensors. Using in-fiber light as both the heating power source and the interrogation light source, regenerativ...