The source resistance of a heterojunction field-effect transistor ~HFET!, whose reduction is mandatory for high-performance devices, consists of an ohmic contact resistance and an access resistance. The access region is located between the geometrical source and the geometrical source side of the gate contact. By means of a quantum-mechanical modeling program, the effect of changes in layer str...

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We demonstrate that high-injection barrier effects associated with the collector-base silicon-germanium (SiGe) to silicon (Si) heterojunction are an important design constraint for SiGe heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. Due to its thermally activated nature, these barrier effects can have important dc and ac consequences at cryogenic temperatures eve...

We demonstrate two-dimensional simulations for design of AlGaAs/InGaAs/GaAs High Electron Mobility Transistors (HEMTs) with gatelengths .,:; 150 nm with emphasis on power applications in the Ka-band and of AlGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) . Besides the use of advanced interface and generation/recombination models the simulations yie ld the bias dependence of the small signa...

Heterojunction Bipolar Transistors (HBTs) are considered excellent candidates for low phase noise millimeter wave applications. They exhibit outstanding high frequency performance and also low baseband noise compared to MESFET and HEMT devices. We have designed and demonstrated state-of-the art microwave and millimeter wave power HBTs using the baseline HBT process at HRL Laboratories. An HBT t...

We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling i...

Because of the interaction between self-heating and hot carriers effects, neither isothermal nor conventional macrothermal models are adequate for the simulation of state-of-the-art power devices; instead, a detailed electro-thermal model accounting for nonstationary transport, such as the Thermal-Fully Hydrodynamic (T-FH) model, is required. We apply a one-dimensional (1-D) implementation of s...

This paper projects the enhanced drive current of a ntype electrostatically doped (ED) tunnel field-effect transistor (ED-TFET) based on heterojunction and band-gap engineering via TCAD 2-D device simulations. The homojunction ED-TFET device utilizes the electrostatic doping in order to create the source/drain region on an intrinsic silicon nanowire that also felicitates dynamic re-configurabil...

A novel bipolar transistor structure, namely, SiGe base lateral PNM Schottky Collector Bipolar Transistor (SCBT) in Silicon-On-Insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. Based on a comparison with its equivalent PNP HBT, we demonstrate for the first time that the proposed SiGe base lateral PNM transistor exhibits a superior performance in terms of high current...