The quaternary nitride-based high electron mobility transistor (HEMT) has been recently a focus of interest because of the possibility to grow lattice-matched barrier to GaN and tune the barrier bandgap at the same time [1]. The reduction of strain-related defects, the high polarization at the interface and high carrier mobility of the 2-dimensional electron gas (2DEG) make InAlGaN a viable way...

Aim To examine the trajectory of forced expiratory volume in 1 s (FEV1) using data from European Cystic Fibrosis (CF) Society Patient Registry collected 2008 to 2016, hence era before highly effective modulator therapy (HEMT). We evaluated risk factors for FEV1 decline. Methods The study population included patients with a confirmed diagnosis CF recorded ECFPR (2008–2016). evolution FEV1% predi...

We present a physics-based finite-element model of operation of an AlGaN/GaN HEMT with device geometry inputs taken from transmission electron microscope cross sections and calibrated by comparison with measured electrical data comprising standard field-effect transistor metrics and less wellknown model parameters. A variety of electrical outputs from the model are compared to experiment, and t...

We report the effect of stress or strain on electronic characteristics a normally off AlGaN/GaN high electron mobility transistor (HEMT) and demonstrate its role as highly sensitive pressure sensor. observe that HEMT drain current exhibits linear change 2.5%/bar upon application pressure, which is translated to sensitivity 1250 ppm−1. This highest ever reported HEMTs many other conventional sen...

InP high electron mobility transistors (InP HEMTs) with different spacer thickness 1 to 7 nm in the InAlAs-InGaAs heterostructure have been fabricated and characterized at 5 K respect electrical dc rf properties. The HEMT noise performance was extracted from gain measurements of a hybrid low-noise amplifier (LNA) equipped discrete transistors. When biased for optimal operation, LNA using HEMTs ...

As one of the approaches to improve p-HEMT, we studied effect misorientation GaAs substrates on surface morphology, structure, and electrical properties pseudomorphic heterostructures, as well parameters transistors based them. In a single technological cycle, heterostructures were formed vicinal with (100) orientation misoriented by 2 o (110) method MOCVD (MOCVD) in cycle. It has been establis...

Behavioral models of common mode (CM) electromagnetic interference (EMI) are proposed herein for a GaN high-electron-mobility transistor (HEMT) synchronous buck converter. First, CM noise model is developed using linear equivalent circuit that consists voltage source, current and two impedances. The behavioral parameters the then extracted by changing input-side shunt A HEMT converter setup bui...

We report a 0.15 μm p-HEMT dual frequency VCO. The dual frequencies are achieved using a switchedresonator topology. Large devices can be used for switching, as their parasitic capacitance is absorbed into the resonator. The phase noise at 1 MHz offset was -101 dBc and -92 dBc at 10.6 and 16.3 GHz respectively.

In this paper we present a high frequency noise model for short channel HEMTs. This model takes into account the effect of depletion region that extends into gate to drain spacing. The effect of this high field extension region on the noise performance of three HEMT structures is analytically calculated and compared with measured data.