The effect of length variation on the magnetic properties of NiFe alloy nanowires electrodeposited into the alumina template was investigated. The diameter (45±2.5 nm) and length (~ 1.9, 7.12, 8.3, 9.5 and 13.3 µm) of the nanowires were estimated from scanning electron microscopy images. Energy dispersive spectroscopy results showed Ni3Fe7 composition of the alloy nanowire...

A considerable fraction of germanium is produced as a by-product in zinc metallurgy. In the conventional roast-leach-electrowin (RLE) process, most of the germanium is incorporated into the neutral leaching residue, which is the main source for germanium recovery. As the largest germanium supplier worldwide, Yunnan Chihong Zinc & Germanium Co., Ltd (Yunnan, China), recover germanium shown in Fi...

coni nanowires were deposited by pulsed electrodeposition technique into porous alumina templates. the effect of off time between pulses (toff) and reductive/oxidative time (treduc/oxid) on the microstructure and magnetic properties of the coni nanowires were investigated. maximum coercivity and squareness were obtained for samples fabricated at treduc/oxid= 0.5 ms and toff =400 ms. the coerciv...

Spin qubits in germanium are a promising contender for scalable quantum computers. Reading out of the spin and charge configuration dots formed Ge/Si core/shell nanowires is typically performed by measuring current through nanowire. Here, we demonstrate more versatile approach on investigating these dots. We employ high-impedance, magnetic-field resilient superconducting resonator based NbTiN c...

Structural defects and their dynamics play an important role in controlling the behavior of phase-change materials (PCM) used in low-power nonvolatile memory devices. However, not much is known about the influence of disorder on the electronic properties of crystalline PCM prior to a structural phase-change. Here, we show that the application of voltage pulses to single-crystalline GeTe nanowir...

By the virtue of the nature of the vapor-liquid-solid (VLS) growth process in semiconductor nanowires (NWs) and their small size, the nucleation, propagation, and termination of stacking defects in NWs are dramatically different from that in thin films. We demonstrate germanium-silicon axial NW heterostructure growth by the VLS method with 100% composition modulation and use these structures as...

We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural studies of both types of NWs performed with electron microscopies reveal a marked difference between the roughnesses of their respective sidewalls. As the investigation of their length depe...

We demonstrate the p-type doping of Ge nanowires (NWs) and p-n junction arrays in a scalable vertically aligned structure with all processing performed below 400 °C. These structures are advantageous for the large scale production of parallel arrays of devices for nanoelectronics and sensing applications. Efficient methods for the oxide encapsulation, chemical mechanical polishing and cleaning ...

The development of non-equilibrium group IV nanoscale alloys is critical to achieving new functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap elemental semiconductor. Here, we describe the fabrication of uniform diameter, direct bandgap Ge(1-x)Sn(x) alloy nanowires, with a Sn incorporation up to 9.2 at.%, far in excess of the equilibrium solubility of S...