In this project, we developed a low temperature (≤450C) silicon-germanium (SiGe) process using the Thermcopoly1/2 furnaces at SNF. Low stress (≤100MPa) poly SiGe has been successfully demonstrated with a deposition temperature below 450C and desired Si to Ge content ratio. Our SiGe deposition process is CMOS compatible and can enable a number of applications for microelectromechanical systems (...

Electronic structure calculations are used to investigate the stability of fluorine-vacancy FnVm clusters in germanium Ge . Using mass action analysis, it is predicted that the FnVm clusters can remediate the concentration of free V considerably. Importantly, we find that F and P codoping leads to a reduction in the concentration of donor-vacancy DV pairs. These pairs are responsible for the at...

An antiferromagnet offers many important functionalities such as opportunities for electrical control of magnetic domains, immunity from perturbations, and fast spin dynamics. Introducing some these intriguing features an into a low dimensional semiconductor core–shell nanowire exciting pathway its usage in antiferromagnetic spintronics. Here, using quantum mechanical approach, we predict that ...

We report a joint experimental and theoretical study on the structures of a series of gold clusters doped with a group-14 atom: MAux (M ) Si, Ge, Sn; x ) 5-8). Well-resolved photoelectron spectra were obtained and compared to calculations at several levels of theory to identify the low-lying structures of MAu5-8. We found that the structure of SiAu5 is dominated by the tetrahedrally coordinated...

In this study, the integration of SiGe selective epitaxy on source/drain regions and high-k and metal gate for 22 nm node bulk pMOS transistors has been presented. Selective Si1-x Ge x growth (0.35 ≤ × ≤ 0.40) with boron concentration of 1-3 × 1020 cm-3 was used to elevate the source/drain. The main focus was optimization of the growth parameters to improve the epitaxial quality where the high-...

Sol-gel derived GeO2-doped silica thin films (x)GeO2 :(12x)SiO2 with x 5 5 to 40 mol % were studied for heat-treatments from 500 to 1000°C. In the conventional single component sol-gel process, temperature is the process parameter that controls the porosity of the film. However, our results revealed that by varying Ge-doping, the film porosity, as determined by spectroscopic ellipsometry, can b...

The mechanism for low temperature electrical conduction in neutron transmutation doped (NTD) germanium is believed to be variable range hopping (VRH). The resistance, R, at temperature T should then follow R(T ) = R0 exp (T0/T ) p, for constant (or nearly constant) values of T0, R0 and p. NTD Ge is thought to have a “Coulomb gap” in the density of states; theories then generally predict p = 0.5...