We synthesized thermally stable graphene-covered Ge (Ge@G) nanowires and applied them in field emission devices. Vertically aligned Ge@G nanowires were prepared by sequential growth of the Ge nanowires and graphene shells in a single chamber. As a result of the thermal treatment experiments, Ge@G nanowires were much more stable than pure Ge nanowires, maintaining their shape at high temperature...

High-quality Ge epilayer on Si(1 0 0) substrate with an inserted low-temperature Ge seed layer and a thin Si0.77Ge0.23 layer was grown by ultrahigh vacuum chemical vapor deposition. The epitaxial Ge layer with surface root-mean-square roughness of 0.7 nm and threading dislocation density of 5 10 cm 2 was obtained. The influence of low temperature Ge seed layer on the quality of Ge epilayer was ...

Hydrogenated multilayers (MLs) of a-Si/a-Ge have been analysed to establish the reasons of H release during annealing that has been seen to bring about structural modifications even up to well-detectable surface degradation. Analyses carried out on single layers of a-Si and a-Ge show that H is released from its bond to the host lattice atom and that it escapes from the layer much more efficient...

The built-in strain and composition of as-grown and Si-capped single layers of Ge/Si dots grown at various temperatures 460–800 °C are studied by a comparative analysis of the Ge-Ge and Si-Ge modes in the polarized Raman spectra of the dots. A pronounced reduction of the strain and Ge content in the dots after deposition of the cap layer at low temperatures is observed, indicating that strain-i...

X-ray diffraction analysis reveals the thiogermanic acid H(4)Ge(4)S(10) possesses discrete adamantane-like Ge(4)S(10)(4)(-) complex anions. Each thioanion is composed of four corner shared GeS(2.5)(-) tetrahedral units. Crystals were grown from anhydrous liquid hydrogen sulfide reactions with glassy germanium sulfide at room temperature. The crystal structure was solved and refined from single ...

A structure model for the Ge(111)-(4×4)-Ag surface is proposed. The model was derived by applying direct methods to surface X-ray diffraction data. It is a missing top layer reconstruction with six Ag atoms placed on Ge substitutional sites in one triangular subunit of the surface unit cell. A ring-like assembly containing nine Ge atoms is found in the other triangular subunit. The stability of...

M. Saranathan, E. Bayram, V. Nimbargi, R. Venkatesan, N. Takei, M. Miyoshi, W. Sun, and J. Glockner Applied Science Laboratory, GE Healthcare, Rochester, MN, United States, MR Engineering, GE Healthcare, Waukesha, WI, United States, GE Healthcare, Bangalore, India, MR Applied Science Laboratory, GE Yokagawa Medical Systems, Hino, Japan, Dept. of Radiology, Mayo Clinic, Rochester, MN, United States

P. J. Beatty, J. Y. Cheng, A. Shankaranarayanan, A. Madhuranthakam, H. Yu, E. Bayram, S. Chang, and J. H. Brittain Applied Science Laboratory, GE Healthcare, Menlo Park, CA, United States, Electrical Engineering, Stanford University, Stanford, CA, United States, Applied Science Laboratory, GE Healthcare, Boston, MA, United States, GE Healthcare, Waukesha, WI, United States, Applied Science Labo...

Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001) substrate by using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron microscopy (HRTEM). The dislocations at the Ge/Si interface were identified to be 90° full-edge dislocations, w...