o bjectives: the aim of this study was to evaluate marginal adaptation of mineral trioxide aggregate (mta), calcium enriched mixture (cem) cement, biodentine and bioaggregate in presence of normal saline and human blood. materials and methods: in this in-vitro experimental study, 80 extracted single-rooted human teeth were instrumented and filled with gutta-percha. after resect- ing the root-en...

Introduction: The main advantage of using ion beams over photons in radiotherapy is due to their inverse depth-dose profiles, allowing higher doses to tumors, while better sparing normal tissues. When calculating dose distributions with ion beams, one crucial point is the uncertainty of the Bragg-peak range. Recently great effort is devoted to enhance the accuracy of the comput...

Paul Hasler and Paul D. Smith Georgia Institute of Technology Atlanta, GA 30332-0250 [email protected] ABSTRACT Recently, we have characterized and modeled oating-gate circuits that adapt their oating-gate charge based upon statistics of the incoming signal. In this paper, we show signal-dependant adaptation in three oating-gate circuits. First, we show classic autozeroing oating-gate ampli...

1. Introduction In spite of intensive efforts, still some serious items to be solved remain for high-k gate stack. By narrowing down the items, gate electrode has become one of the most problematic issues due to unavoidable Fermi level pinning [1]. In this talk, after a brief benchmarking of high-k gate stack technology, we lay particular stress on the impact on the electrical characteristics c...

This paper investigates the use of floating gate MOS devices for analog trimming. A floating gate MOSFET structure, in which tunneling occurs at the corners of a polysilicon slab, has been fabricated using a standard 1.2p.m n-well CMOS process. The analog storage performance of the floating gate is evaluated. A threedimensional device simulator, DAVINCI, is used to characterize the field enhanc...

DRIVING eGaN® FETS When considering gate drive requirements, the three most important parameters for eGaN FETs are (1) the maximum allowable gate voltage, (2) the gate threshold voltage, and (3) the “body diode” voltage drop. The maximum allowable gate-source voltage for an eGaN FET of 6 V is low in comparison with traditional silicon. Secondly, the gate threshold is also low compared to most p...

as a beam of light. It! reveals a system which?with certain honourable exceptions ?s degrading, unhygienic and inefficient. The authors are intelligent and observant women. Some of the orders they received were baffling and frustrating, and some were downright scandalous. Prisoners were obliged to carry 50 lb. bags of sugar, to man-handle enormously heavy barrels. and to move back-breaking load...

DriviNG eGaN® FETs When considering gate drive requirements, the three most important parameters for eGaN FETs are (1) the maximum allowable gate voltage, (2) the gate threshold voltage, and (3) the “body diode” voltage drop. The maximum allowable gate-source voltage for an eGaN FET of 6 V is low in comparison with traditional silicon. Secondly, the gate threshold is also low compared to most p...

---In this paper a thorough investigation of resistive logic gate DCI has been made. The current equations of this gate at each stage have been deduced. The dynamic response of this DCI gate has been obtained by the computer-simulation. Our concept of turn-on delay has been introduced. The effect of overdrive current on turn-on delay for resistive logic gate has been shown. This will provide a ...