The miniaturization of optoelectronic devices is essential for the continued success of photonic technologies. Nanowires have been identified as potential building blocks that mimic conventional photonic components such as interconnects, waveguides, and optical cavities at the nanoscale. Semiconductor nanowires with high optical gain offer promising solutions for lasers with small footprints an...

Two competing recombination mechanisms of stimulated emission in the vicinity of 145 K have been directly observed in the temperature dependence of the optical emission spectra for high-quality, unintentionally doped gallium nitride. Our analysis of the spectra indicates that exciton-exciton scattering is responsible for stimulated emission below 145 K, while at higher temperatures an electron-...

We report a new biphasic crystalline wurtzite/zinc-blende homostructure in gallium nitride nanowires. Cathodoluminescence was used to quantitatively measure the wurtzite and zinc-blende band gaps. High-resolution transmission electron microscopy was used to identify distinct wurtzite and zinc-blende crystalline phases within single nanowires through the use of selected area electron diffraction...

Our previous studies of the mechanism of cell growth inhibition by gallium have suggested that the block in cellular iron uptake induced by transferrin-gallium results in an inhibition of the iron-dependent M2 subunit of ribonucleotide reducÃ-ase.However, it is not known whether the inhibitory effect of gallium on ribonucleotide reducÃ-aseis solely the result of limiting iron availability for e...

We propose a novel 8-channel wavelength multimode interference (MMI) demultiplexer in slot waveguide structures that operate at 1530 nm, 1535 nm, 1540 nm, 1545 nm, 1550 nm, 1555 nm, 1560 nm, and 1565 nm. Gallium nitride (GaN) surrounded by silicon (Si) was found to be a suitable material for the slot-waveguide structures. The proposed device was designed by seven 1 × 2 MMI couplers, fourteen S-...

This paper discusses the background, applications, and proposed characterization of Gallium Nitride (GaN) based hybrid MOS-HEMTs for high-voltage power switching. The basic material properties, device structure, and basics of operation are discussed in section II. Section III touches on the relevance and motivation behind this research and some simple examples of where GaN based MOS-HEMTs would...

Optomechanical crystal (OMC) cavities which exploit the simultaneous photonic and phononic bandgaps in periodic nanostructures have been utilized to colocalize, couple, and transduce optical and mechanical resonances for nonlinear interactions and precision measurements. The development of near-infrared OMC cavities has difficulty in maintaining a high optomechanical coupling rate when scaling ...