We have developed a bandpass floating-gate amplifier that uses tunneling and pFET hot-electron injection to set its dc operating point adaptively. Because the hot-electron injection is an inherent part of the pFET’s behavior, we obtain this adaptation with no additional circuitry. Because the gate currents are small, the circuit exhibits a high-pass characteristic with a cutoff frequency less t...

This study presents the fabrication and improved properties of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium dioxide (LPD-TiO₂) as a gate dielectric. Sulfur pretreatment and postoxidation rapid thermal annealing (RTA) were consecutively employed before and after the gate dielectric was deposited to fi...

Simulation and modeling of gate tunneling current for thin-oxide MOSFETs and Double-Gate SOIs are discussed. Guidelines for design of leaky MOS capacitors are proposed. Resonant gate tunneling current in DG SOI is simulated, based on quantum-mechanical models, and shown to be an issue of growing concern.

We report on the nanosheet-thickness effects on the performance of top-gate MoS(2) field-effect transistors (FETs), which is directly related to the MoS(2) dielectric constant. Our top-gate nanosheet FETs with 40 nm thin Al(2)O(3) displayed at least an order of magnitude higher mobility than those of bottom-gate nanosheet FETs with 285 nm thick SiO(2), benefiting from the dielectric screening b...

We present a charge-based Verilog-A model for 2-D-material (2DM)-based field-effect transistors (FETs) with application in neuromorphic circuit design. The combines the explicit solution of drift-diffusion transport and electrostatics, including Fermi–Dirac statistics. Ward–Dutton linear charge partitioning scheme is then employed terminal charges capacitance calculations. accurately predicts e...

We propose a computationally efficient, accurate and numerically stable quantum-mechanical technique to calculate the direct tunneling ~DT! gate current in metal-oxide-semiconductor ~MOS! structures. Knowledge of the imaginary part G of the complex eigenenergy of the quasi-bound inversion layer states is required to estimate the lifetimes of these states. Exploiting the numerically obtained exp...

−The EKV model, a continuous model for the MOS transistor, has been adapted to both partially depleted SOI MOSFETs with grounded body (GBSOI) and dynamic threshold MOS (DTMOS) transistors. Adaptation is straightforward and helps to understand the physics of the DTMOS. Excellent agreement is found between the model and the measured characteristics of GBSOI and DTMOS devices Index Terms− Silicon-...

A theoretical description of gate tunnel current in an MOS transistor is proposed, and the results of calculations for the case of an n-channel MOSFET with extremely thin gate oxides are given. A comparison of the gate tunnel current with the drain current is made.

The gate conductor material affects the threshold voltage of metal-oxidesemiconductor (MOS) transistors through the influence of the electrochemical work function and electric charge. Measurements of the threshold voltage from current voltage characteristics may therefore provide a method to estimate the electronic properties of biomolecules located on the gate electrode. We have deposited DNA ...

MN178 Electrical characterization of InAs-nanocrystal-based nonvolatile memories Moïra Hocevar, Philippe Regreny, Michel Gendry, Abdelkader Souifi Institut des Nanotechnologies de Lyon-INL, UMR-CNRS-5270, INSA de Lyon, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex, France, [email protected] The development of highly integrated nonvolatile memory (NVM) devices has led to the use of Si...