While semiconductor-based spin qubits have demonstrated promising fidelities exceeding 99.9%, their coherence time is limited by the presence of charge noise. However, fast process optimization for reduced noise becomes challenging due to time-consuming nature cryogenic measurements. Hence, this work explores low frequency analysis methods determine interface trap densities, temperature depende...

We report in this letter the outstanding frequency stability performances of an autonomous cryogenique sapphire oscillator presenting a flicker noise floor below 2e-16 near 1,000 s integration time and long term Allan Deviation (ADEV) limited by random walk process 1e-18/sqr(tau). The qualification at level called for implementation sophisticated instrumentation associated with ultra-stable ref...

This study presents a Ka-band direct-conversion receiver using 28-nm CMOS (Complimentary Metal Oxide Semiconductor) process for radar applications. The designed includes LNA (Low-Noise Amplifier), Mixer, and Baseband amplifier. adopts two-stage cascode amplifier structure. Then, the mixer is single-balanced passive with low flicker noise. At end, baseband transimpedance fat FET (Field-Effect-tr...

Low-frequency noise with a spectral density that depends inversely on frequency has been observed in a wide variety of systems including current fluctuations in resistors, intensity fluctuations in music and signals in human cognition. In electronics, the phenomenon, which is known as 1/f noise, flicker noise or excess noise, hampers the operation of numerous devices and circuits, and can be a ...

This paper presents a framework for modeling the phase noise in complementary metal–oxide–semiconductor (CMOS) ring oscillators. The analysis considers both linear and nonlinear operations, and it includes both device noise and digital switching noise coupled through the power supply and substrate. In this paper, we show that fast rail-to-rail switching is required in order to achieve low phase...