All optical switching (AOS) applications require materials with a large nonlinear refractive index (n2) but relatively small linear and nonlinear absorption loss. The figure-of-merit (FOM), defined as the ratio between the real and imaginary parts of the second hyperpolarizability (γ), is widely used to evaluate the operating efficiency of AOS materials. By using an essential-state model, we de...

This article presents a wide-band suppression technique of flicker phase noise (PN) by means gate–drain shift in transformer-based complementary oscillator. We identify that after naturally canceling its second-harmonic voltage the operation itself, third-harmonic current entering capacitive path is now main cause asymmetry rising and falling edges, leading to <inline-formula xmlns:mml="http://...

We present the design and characterization of a silicon PN junction traveling-wave Mach–Zehnder modulator near 1550 nm wavelength. The device shows 30 GHz bandwidth at 1 V reverse bias, with a 2.7 V-cm VπLπ and accordingly a 9-V small-signal Vπ. The insertion loss of the phase shifter is 3.6 dB70.4 dB. The device performance metrics in combination show significant improvement compared to the st...

The section-carry based carry lookahead adder (SCBCLA) architecture was proposed as an efficient alternative to the conventional carry lookahead adder (CCLA) architecture for the physical implementation of computer arithmetic. In previous related works, self-timed SCBCLA architectures and synchronous SCBCLA architectures were realized using standard cells and FPGAs. In this work, we deal with i...

This paper presents a throughput/area-efficient hardware accelerator architecture for elliptic curve point multiplication (ECPM) computation over GF(2233). The throughput of the proposed design is optimized by reducing total clock cycles using bit-parallel Karatsuba modular multiplier. We employ two techniques to minimize resources: (i) consolidated arithmetic unit where we combine single adder...

This paper is to review important device parameters as the figures of merit (FOM) to understand the device characteristics for analog/RF applications. These FOM should be characterized and evaluated in technology development and model generation for analog/RF technologies. This paper has tried to show these FOM with both measured data and model simulation to help both technology developers and ...

In this study, a two-dimensional low-symmetric photonic crystal (PC) configuration with elliptical geometry is presented and its slow-light (SL) effect investigated. Reducing the symmetry in PC unit cell provides slow modes at higher transverse electric bands. The calculated group index corresponding normalized bandwidth equal to {ng, BW}={63.56, 0.0065}. That corresponds value of figure merit ...