Authors investigate the carrier mobility in field-effect transistors mainly when fabricated on Si(110) wafers. They showed that the methods developed to extract the conduction parameters cannot be implemented for Si(110) p-MOSFETs. Authors then developed a more accurate mobility model able to simulate not only the drivability but also the transconductance for these same devices. The study of th...

We present silicon-compatible trigated p-Ge/i-Si/n-Si axial heteronanowire tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our TFETs have high I(ON) ~ 2 μA/μm, fully suppressed ambipolarity, and a subthreshold slope SS ~ 140 mV/decade over 4 decades of current with lowest ...

We present performance characteristics of nanoscaled cobalt phthalocyanine-based organic field-effect transistors (OFETs) as a function of channel length. We found a channel length range which maximizes the field effect mobility in a trade-off between the decrease in the number of organic grain boundaries and the increase of the electrode-organic contact region. Further reduction of channel len...

Novel metal oxide semiconductor field effect transistor (MOSFET) architectures aimed at sub IV operation with enhanced current driving capability are reported. In our design, the planar channel region in a conventional MOSFET is replaced by an array of isolated Si wires. Directional metal coverage of the two sidewalls and the top surface of each Si wire help achieve enhanced gate control. Sub I...

Graphene field effect transistors with an Al2O3 gate dielectric are fabricated on H-intercalated bilayer graphene grown on semi-insulating 4H-SiC by chemical vapour deposition. DC measurements of the gate voltage vg versus the drain current id reveal a severe hysteresis of clockwise orientation. A capacitive model is used to derive the relationship between the applied gate voltage and the Fermi...

Carbon nanotubes field effect transistors (CNTFETs) are one of the most promising candidates for future nanoelectronics. In this paper, the review of CNTFETs is presented. The structure, operation and the characteristics of carbon nanotubes metal-insulator-semiconductor capacitors have been discussed. The operation and dc characteristics of CNTFETs have been presented. In future, we expect the ...

The purpose of this review article is to report on the recent developments and the performance level achieved in the strained-Si/SiGe material system. In the first part, the technology of the growth of a high-quality strained-Si layer on a relaxed, linear or step-graded SiGe buffer layer is reviewed. Characterization results of strained-Si films obtained with secondary ion mass spectroscopy, Ru...

This work presents a model for electrolyte-gated graphene field-effect transistors (EGFETs) that incorporates the effects of the double layer capacitance and the quantum capacitance of graphene. The model is validated through experimental graphene EGFETs, which were fabricated and measured to provide experimental data and extract graphene EGFET parameters such as mobility, minimum carrier conce...

Graphene and single-walled carbon nanotube (SWCNT) have been widely studied because of their extraordinary electrical, thermal, mechanical, and optical properties. This paper describes a novel and flexible method to fabricate all-carbon field-effect transistors (FETs). The fabrication process begins with assembling graphene grown by chemical vapor deposition (CVD) on a silicon chip with SiO2 as...