نتایج جستجو برای: field effect transistor fet

تعداد نتایج: 2342382  

2015
Kuan-I Chen Chien-Yuan Pan Keng-Hui Li Ying-Chih Huang Chia-Wei Lu Chuan-Yi Tang Ya-Wen Su Ling-Wei Tseng Kun-Chang Tseng Chi-Yun Lin Chii-Dong Chen Shih-Shun Lin Yit-Tsong Chen

Many transcribed RNAs are non-coding RNAs, including microRNAs (miRNAs), which bind to complementary sequences on messenger RNAs to regulate the translation efficacy. Therefore, identifying the miRNAs expressed in cells/organisms aids in understanding genetic control in cells/organisms. In this report, we determined the binding of oligonucleotides to a receptor-modified silicon nanowire field-e...

2014
Shanshan Cheng Kaori Hotani Sho Hideshima Shigeki Kuroiwa Takuya Nakanishi Masahiro Hashimoto Yasuro Mori Tetsuya Osaka

Detection of tumor markers is important for cancer diagnosis. Field-effect transistors (FETs) are a promising method for the label-free detection of trace amounts of biomolecules. However, detection of electrically charged proteins using antibody-immobilized FETs is limited by ionic screening by the large probe molecules adsorbed to the transistor gate surface, reducing sensor responsiveness. H...

2015
A. Kayalvizhi N. Ramya

This paper presents logic level estimators of leakage current for nanoscale digital standard cell circuits. Here the proposed estimation model is based on the characterization of internal node voltages of cells and the characterization of leakage current in a single Field-Effect Transistor (FET). Finally the estimation model allowed direct implementation of supply voltage variation impact on le...

Journal: :Electronics 2021

Recently, in accordance with the demand for development of low-power semiconductor devices, a negative capacitance field-effect-transistor (NC-FET) that integrates ferroelectric material into gate stack and utilizes capacitive behavior has been widely investigated. Furthermore, gate-all-around (GAA) architecture to reduce short-channel effect is expected be applied after Fin-FET technology. In ...

2015
Bala Tripura Sundari Amrita Vishwa Vidyapeetham

The era of nanoelectronics has emerged to overcome the effects of limits of physics due to technology scaling. Hence there is a need to explore the use of advanced nanomaterials namely, graphene and carbon nanotube that can overcome the limitations of short channel effects that arise in conventional silicon based field effect transistors (FET). The high carrier mobility of these materials on a ...

2013
Meisam Rahmani Mohammad Taghi Ahmadi Hediyeh Karimi Feiz Abadi Mehdi Saeidmanesh Elnaz Akbari Razali Ismail

Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective ma...

2012
Shigeo Maruyama Shinya Aikawa Rong Xiang Erik Einarsson Shohei Chiashi

Carbon nanotube field-effect transistor (CNT-FET) is a promising candidate for future electronic devices due to the excellent electronic properties. Recently, FET using CNTs as both electrodes and channel has been demonstrated [1]. The all-CNT devices can work on a flexible substrate without degrading their electrical properties [2,3] and may realize metal-free electronics. The fabrication tech...

2016
Hui Li Chenyu Wen Youwei Zhang Dongping Wu Shi-Li Zhang Zhi-Jun Qiu

In the field of electronic gas sensing, low-dimensional semiconductors such as single-walled carbon nanotubes (SWCNTs) can offer high detection sensitivity owing to their unprecedentedly large surface-to-volume ratio. The sensitivity and responsivity can further improve by increasing their areal density. Here, an accelerated gas adsorption is demonstrated by exploiting volumetric effects via di...

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