نتایج جستجو برای: feconi nanowires
تعداد نتایج: 14689 فیلتر نتایج به سال:
We demonstrate the feasibility of fabrication of semiconducting nanowires (quantum dots) using F-actin as a template. Three different approaches of assembling quantum dots into nanowires are described. The nanowires were characterized by fluorescence microscopy.
Single crystalline zinc oxide (ZnO) nanowires have been grown on Si (100) substrates by a vapor-liquid-solid (VLS) process at temperatures in the range 850-950 °C in an inert atmosphere. The VLS-grown ZnO nanowires have been characterized in detail using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), X-ray photoelectron spectroscopy (XPS), transmission electron mi...
The synthesis of gallium nitride nanowires (GaN NWs) by plasma enhanced chemical vapor deposition (PECVD) are successfully demonstrated in this work. The simple and green synthesis route is to introduce gallium oxide (Ga2O3) and nitrogen (N2) for the growth of nanowires. The prepared GaN nanowires have a single crystalline wurtzite structure, which the length of some nanowires is up to 20 μm, w...
Silicon nitride nanowires were synthesized using silicon monoxide as raw materials and an alumina plate as substrate at 1500°C. The obtained nanowires were characterized by X-ray diffraction, Fourier transform infrared spectrosco‐ py, scanning electron microscopy, high-resolution trans‐ mission electron microscopy and thermogravimetricdifferential scanning calorimetry. The results revealed that...
In this study, beta-In(2)S(3) nanowires were first synthesized by sulfurizing the pure Indium (In) nanowires in an AAO membrane. As FE-SEM results, beta-In(2)S(3) nanowires are highly ordered, arranged tightly corresponding to the high porosity of the AAO membrane used. The diameter of the beta-In(2)S(3) nanowires is about 60 nm with the length of about 6-8 mum. Moreover, the aspect ratio of be...
Semiconducting nanowires frequently have enhanced properties and unique functionality compared to their bulk counterparts. Controlling the geometry of nanowires is crucial for their integration into nanoscale devices because the shape of a device component can dictate its functionality, such as in the case of a mechanical spring or an antenna. We demonstrate a novel synthetic method for making ...
Using non-equilibriummolecular dynamics methods, the analysis of geometry and temperature dependent thermal conductivities of diamond nanowires is carried out. It is found that at the same temperature conditions, thermal conductivities of diamond nanowires increase with increasing lengths, ranging from 20 to 350 nm and cross-sectional areas ranging from 2 to 30 nm. At the same length, temperatu...
thin films of sno2 nanowires were successfully prepared by using chemical vapor deposition (cvd) process on quartz substrates. afterwards, a thin layer of palladium (pd) as a catalyst was coated on top of nanowires. for the deposition of pd, a simple and low cost technique of spray pyrolysis was employed, which caused an intensive enhancement on the sensing response of fabricated sensors. prep...
in this paper, surface and piezoelectric effects on the vibration behavior of nanowires (nws) are investigated by using a timoshenko beam model. the electric field equations and the governing equations of motion for the piezoelectric nws are derived with the consideration of surface effects. by the exact solution of the governing equations, an expression for the natural frequencies of nws with ...
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