The morphology of the porous network in porous SiC has been studied. It has been found that pore formation starts with a few pores on the surface and then the porous network grows in a V-shaped branched structure below the surface. The hydrogen etching rates of porous and nonporous SiC have been measured. Etch rates of porous and nonporous wafers of various miscuts are found to be equal within ...

Spectroscopic ellipsometric monitoring of electron cyclotron resonance plasma etching of GaAs and AlGaAs" (1995). Faculty Publications from the Department of Electrical and Computer Engineering. 73. In situ real time spectroscopic ellipsometry measurements were made during electron cyclotron resonance plasma etching of radio frequency biased GaAs and AlGaAs samples. Gas mixtures used were CH 4 ...

Selective etching of SiO2 over polycrystalline silicon has been studied using CHF3 in an inductively coupled plasma reactor ~ICP!. Inductive powers between 200 and 1400 W, as well as pressures of 6, 10, and 20 mTorr were used in this study of the etch rate and selectivity behaviors for silicon dioxide, silicon, and passively deposited fluorocarbon films. Using in situ ellipsometry, the etch rat...

background: based on contradictory findings concerning the use of lasers for enamel etching, the purpose of this study was to investigate the shear bond strength of teeth prepared for bonding with er-yag laser etching and compare them with phosphoric acid etching. materials and methods: in this in vitro study forty – eight premolars, extracted for orthodontic purposes were randomly divided in t...

The development of an etching process with controllable rate and high selectivity is key to fabricating high-performance electronic optoelectronic devices. In this paper, we report the photo-enhanced metal-assisted...

Manufacturing micro/nanoscale devices is a challenge that has many solutions, all with their own caveats depending on the desired finished product. Electron beam lithography (EBL) is one of these preferred solutions, however, EBL is expensive and can be inconsistent when pushing the limits of resolution without proper control over the environment. Our alternative method of EBL omits the develop...

In this work, the inductively coupled plasma etching technique was applied to etch the barium titanate thin film. A comparative study of etch characteristics of the barium titanate thin film has been investigated in fluorine-based (CF4/O2, C4F8/O2 and SF6/O2) plasmas. The etch rates were measured using focused ion beam in order to ensure the accuracy of measurement. The surface morphology of et...

A detailed study of the reactive ion etching (RIE) of GaP, through BCl3 based plasma processing is reported. We discuss the effects on the etch ate through the studies of RF power, reactant and carrier gas (Ar) flow and chamber pressure. Atomic force microscopy (AFM) characterization, long with photoluminescence (PL) spectroscopy, is used to investigate the surface quality and correlate the mat...

A simple and efficient approach for fabricating silicon nanopillar arrays with a high aspect ratio and controllable sidewall profiles has been developed by using holographic lithography and a novel single-step deep reactive ion etching. During the etching process, scalloping of the sidewalls can be avoided while reserving the high mask selectivity and high etching rate. Besides, the sidewall an...

A highly chemical reactive ion etching process has been developed for MOVPE-grown GaN on sapphire. The key element for the enhancement of the chemical property during etching is the use of a fluorine containing gas in a chlorine based chemistry. In the perspective of using GaN substrates for homo-epitaxy of high quality GaN/AlGaN structures we have used the above described RIE process to smooth...