نتایج جستجو برای: energy carriers
تعداد نتایج: 707965 فیلتر نتایج به سال:
background and aims. current chemical methods may not efficiently disinfect dental stone casts. the aim of this study was to investigate if microwave irradiation is effective for disinfection of stone casts. materials and methods. in this laboratory study, three groups (n = 162) of prepared spherical stone beads as carriers with a diameter of 10 mm were inoculated by separately soaking in three...
Abstract Photogenerated charge carriers in organic photovoltaics (OPVs) suffer relaxation and recombination losses. However, extracting these at higher energy (‘Hot-carriers’) has been found to be effective overcome such loss pathways improve efficiency of OPVs. Excess long delocalization length promotes hot-carrier escape from Coulombic attraction dissociation into free charges. Here, I have r...
Electrochemical energy storage has been regarded as one of the most promising strategies for next-generation consumption. To meet increasing demands urban electric vehicles, development green and efficient charging technologies by exploitation solar should be considered outdoor in future. Herein, a light-sensitive material (copper foam-supported copper oxide/nickel oxides nanosheets arrays, nam...
We develop a theory of energy relaxation and thermalization of hot carriers in clean quantum wires. Our theory is based on a controlled perturbative approach for large excitation energies and emphasizes the important roles of the electron spin and finite temperature. Unlike in higher dimensions, relaxation in one-dimensional electron liquids requires three-body collisions and is much faster for...
Non-radiative recombination (NRR) of excited carriers poses a serious challenge to optoelectronic device efficiency. Understanding the mechanism is thus crucial to defect physics and technological applications. Here, by using first-principles calculations, we propose a new NRR mechanism, where excited carriers recombine via a Frenkel-pair (FP) defect formation. While in the ground state the FP ...
Four-dimensional scanning ultrafast electron microscopy is used to investigate doping- and carrier-concentration-dependent ultrafast carrier dynamics of the in situ cleaved single-crystalline GaAs(110) substrates. We observed marked changes in the measured time-resolved secondary electrons depending on the induced alterations in the electronic structure. The enhancement of secondary electrons a...
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