In this study, we first compare the bandgap determination methods in SiON thin films using two established techniques: Ellipsometry and Energy Loss Spectrum from X-ray Photoelectron Spectroscopy. ellipsometry case, modelled optical properties a single Tauc-Lorentz oscillator model, range 1.5 to 6 eV, while for XPS used threshold energy of O1s N1s main core levels determine bandgap. We observed ...

Light-matter interplay is widely used for analyzing the topology of surfaces on small scales use in areas such as nanotechnology, nanoelectronics, photonics, and advanced materials. Conventional optical microscope imaging methods are limited resolution to a value comparable wavelength, so-called Abbe limit, cannot be measure nano-sized structures. Scatterometry an method that can structures sma...

This paper describes a study concerning the interaction of oxygen with clean Ge(O01)2 x 1 surfaces in ultrahigh vacuum at 300 K. Surface conductance measurements, differential ellipsometry in the photon energy range of 1.5-4 eV and Auger electron spectroscopy have been used to monitor this solid-gas reaction. We observed in the joint density of states. as derived from ellipsometry. a peak at ab...