This paper presents an electrically-mediated process for copper metallization of semiconductor interconnect features. Compared to traditional metallization processes, the proposed electrochemical deposition process uses a singlecomponent bath that contains no difficult-to-control organic accelerators and levelers. The feasibility of the process is demonstrated by copper deposition onto sectione...

Gas-mediated electron beam induced etching (EBIE) is a nanoscale, direct-write technique analogous to gas-assisted focused ion beam (FIB) milling. The main advantage of EBIE is the elimination of sputtering and ion implantation during processing as well as greater material selectivity [1]. Here we discuss recent developments that expand the scope of EBIE applications in nanofabrication and defe...

We report on the low temperature growth, by molecular beam epitaxy (375 C) and electron-beam evaporation (300 C), of p-Ge films on n-Si substrates for fabricating p-n junction photodetectors, aimed at the integration of opto-electronic components with back-end Si CMOS processing. Various surface hydrogen and hydrocarbon removal treatments were attempted to improve device properties. We invoke G...

The microstructure of nominally undoped epitaxial wurtzite-structure o-GaN films, grown by gas-source molecular-beam epitaxy, plasma-assisted molecular-beam epitaxy, and metalorganic chemical-vapor deposition, has been investigated by transmission electron microscopy (TEM) and high-resolution TEM. The results show that undoped a-GaN films have an ordered point-defect structure. A model of this ...

Nanopore-based sensing has emerged as a promising candidate for affordable and powerful DNA sequencing technologies. Herein, we demonstrate that nanopores can be successfully fabricated in Mg alloys via focused electron beam (e-beam) technology. Employing in situ high-resolution transmission electron microscopy techniques, we obtained unambiguous evidence that layer-by-layer growth of atomic pl...

The NanoStructures Laboratory (NSL) at MIT develops techniques for fabricating surface structures of integrated circuits (IC) with feature sizes in the range from nanometers to micrometers, and uses these structures in a variety of research projects. The NSL includes facilities for lithography (photo, interferometric, electron beam, ion beam, and x-ray), etching (chemical, plasma and reactive-i...