نتایج جستجو برای: effect transistors
تعداد نتایج: 1652097 فیلتر نتایج به سال:
Recent experiments on ferroelectric gating have introduced a novel functionality, i.e., nonvolatility, in graphene field-effect transistors. A comprehensive understanding in the nonlinear, hysteretic ferroelectric gating and an effective way to control it are still absent. In this Letter, we quantitatively characterize the hysteretic ferroelectric gating using the reference of an independent ba...
Integrated surround-gate field-effect-transistors enabled by bottom-up synthesis of nano-bridges are demonstrated. Horizontally oriented silicon nano-bridge devices are fabricated avoiding the rigorous processes for aligning and contacting nanowires grown via a bottom-up technique. Evaluation of electrical properties and a memory device application of the transistors are presented.
Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based ...
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