نتایج جستجو برای: dykes decreasing the resistivity

تعداد نتایج: 16058345  

Ahadnejad, Vahid, Deevsalar, reza, Yeganehfar, Hadi,

The geochemical signatures like discordant variation of major and trace elements among felsic-intermediate and basic rocks  and  mafic enclaves of Malayer region on binary variation plots, decreasing values of FeOt, TiO2, MgO, MnO and CaO accompanied with increasing of SiO2 content from basic to felsic rocks, and decreasing Ni, Cr and Co with increasing SiO2 are considered as indications of mag...

  The Boltzmann equation is a semiclassical approach to the calculation of the electrical conductivity. In this work we will first introduce a simple model for calculation of thin film resistivity and show that in an appropriate condition the resistivity of thin films depends on the electron mean free path, so that studying and measurement of thin films resistivity as a function of film thickne...

2014
NATALIE BAILEY

The rape trial of former Notre Dame football p layer Donald Dykes began this week and his accuser, a former Notre Dame student, testified as the first wit­ ness for the p ro se c u t io n on Tuesday. Dykes is the second of the four former Notre Dame football play­ ers accused of sexually assaulting the woman to be tr ied . He is charged with rape, conspiracy to commit rape and sexual battery. D...

2016
Mary D. Bondmass Susan Kowalski Sheniz Moonie

In the United States, nursing programs are commonly evaluated by their graduates success on the National Council Licensure Examination for Registered Nurses (NCLEX-RN c ©). The purpose of this paper is to describe a change in NCLEX-RN c © success rates following the addition of standardized exams throughout our program’s curriculum, and to compare these exam scores between graduates who pass NC...

Journal: :Physical review letters 2009
A Maisuradze M Nicklas R Gumeniuk C Baines W Schnelle H Rosner A Leithe-Jasper Yu Grin R Khasanov

The filled skutterudite superconductor PrPt4Ge12 was studied in muon-spin rotation (muSR), specific heat, and electrical resistivity experiments. The continuous increase of the superfluid density with decreasing temperature and the dependence of the magnetic penetration depth lambda on the magnetic field obtained by means of muSR, as well as the observation of a T3 dependence of the electronic ...

2000
Yoichi Ando A. N. Lavrov Kouji Segawa

We present a study of the in-plane and out-of-plane magnetoresistance (MR) in heavily-underdoped, antiferromagnetic YBa2Cu3O6+x, which reveals a variety of striking features. The in-plane MR demonstrates a “d-wave”-like anisotropy upon rotating the magnetic field H within the ab plane. With decreasing temperature below 20-25 K, the system acquires memory: exposing a crystal to the magnetic fiel...

2009
M Eisterer H W Weber J Jiang J D Weiss A Yamamoto

SmFeAsO1−xFx was irradiated in a fission reactor by a fast (E > 0.1 MeV) neutron fluence of 4 × 1021 m−2. The introduced defects increased the normal state resistivity due to a reduction in the mean free path of the charge carriers. This leads to an enhancement of the upper critical field at low temperatures. The critical current density within the grains, Jc, increases upon irradiation. The se...

Journal: :Nanoscale 2011
Yutaka Maeda Kazuki Komoriya Katsuya Sode Junki Higo Takayuki Nakamura Michio Yamada Tadashi Hasegawa Takeshi Akasaka Takeshi Saito Jing Lu Shigeru Nagase

Single-walled carbon nanotubes (SWNTs), synthesized using the arc-discharge method and the direct-injection-pyrolytic synthesis (DIPS) method, were dispersed in a tetrahydrofuran solution containing propylamine and used to prepare transparent and conductive thin films on PET films using an airbrush technique. The SWNTs were analyzed using vis-near infrared absorption spectroscopy, Raman spectro...

2010
Fathalla Hamed

Ni0.25Fe0.75Zr₃ metallic glassy ribbons were annealed in evacuated quartz ampoules beyond the crystallization temperatures (Tx ~655 K) over the range 773 to 1,173 K for varying periods of time. The resistivity of samples annealed over the temperature range 923 to 1,073 K for periods less than four hours increased as a function of decreasing temperature, while it decreased for samples annealed f...

2013
J. Huran V. N. Shvetsov

PECVD technology was used for deposition of a-SiC:H films at different temperature from SiH4 and CH4 gas mixture. A P-type silicon wafer with resistivity 2-7 cm and (100) orientation was used as the substrate for the growth of SiC films. Irradiation of samples by fast neutrons with fluence 1.4x10 14 cm -2 was used. Raman band feature intensity decreasing after neutron irradiation. The measured ...

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