Gate depletion and boron penetration through thin gate oxide place directly opposing requirements on the gate engineering for advanced MOSFET’s. In this paper, several important issues of deep-submicron CMOS transistor gate engineering are discussed. First, the impact of gate nitrogen implantation on the performance and reliability of deep-submicron CMOSFET’s is investigated. The suppression of...

In the present study, TiO 2 /SiO 2 and TiO 2 /SiO 2 /Ag nanocomposite powders were synthesized by sol-gel technique. Moreover, for investigation of the Ag doping effect different concentrations of dopant were added. Structures were characterized by IR spectroscopy, Scanning Electron Microscopy (SEM), Energy Dispersive Analytical X-Ray (EDAX), and X-Ray Diffraction (XRD) methods. Fur...

With the increase in outsourcing manufacturing of integrated circuits to di erent countries, the topic of trust and security becomes more and more important. The built circuits could contain some malicious modi cations introduced during production, known as hardware trojans. Common ways of detecting these modi cation include optical inspection with electron-microscopes, comparing side-channel i...

This communication describes a new method for producing stable, high concentrations of Sc21 in optically clear CaF2 crystals. We have achieved Sc21 concentrations as high as 3 3 1018 cm23 without degradation of optical quality. We have converted as much as 5% of the scandium dopant to the divalent state. The concentration of divalent scandium is stable during room temperature storage for period...

Planar and nanowire (NW) tunneling field effect transistors (TFETs) have been fabricated on ultra thin strained and unstrained SOI with shallow doped Nickel disilicide (NiSi2) source and drain (S/D) contacts. We developed a novel, self-aligned process to form the p-i-n TFETs which greatly easies their fabrication by tilted dopant implantation using the high-k/metal gate as a shadow mask and dop...

In this study, BaTiO3–(Bi0.5Na0.5)TiO3 ceramics with various amounts of Ta2O5 dopant were investigated for their ability to enhance high-temperature stability to meet X9R specifications. The results were compared to those for ceramics with the common Nb2O5 additive. The best composition appeared to be 0.9BaTiO3–0.1(Bi0.5Na0.5)TiO3 with 2 mol% Ta2O5 dopant sintered at 1215 °C, which had a dielec...

All-solid microstructured optical fibers (MOF) allow the realization of very flexible optical waveguide designs. They are prepared by stacking of doped silica rods or canes in complex arrangements. Typical dopants in silica matrices are germanium and phosphorus to increase the refractive index (RI), or boron and fluorine to decrease the RI. However, the direct interface contact of stacking elem...

a comprehensive study on the structural, electronic and nonlinear optical (nlo) properties of alumina nanostructures (al2o3)n with n = 2-5 belonging to the groups iii and vi dopants carried out by density functional theory. the nbo charges exhibit dopant atoms caused to the increasing charge transfer and introduces acceptor-donor model for nlo response of alumina nanostructures. under the influ...