نتایج جستجو برای: dielectric thin film

تعداد نتایج: 221297  

2017
Seung-Yeol Lee Yong-Hae Kim Seong-M. Cho Gi Heon Kim Tae-Youb Kim Hojun Ryu Han Na Kim Han Byeol Kang Chi-Young Hwang Chi-Sun Hwang

The development of digital holography is anticipated for the viewing of 3D images by reconstructing both the amplitude and phase information of the object. Compared to analog holograms written by a laser interference, digital hologram technology has the potential to realize a moving 3D image using a spatial light modulator. However, to ensure a high-resolution 3D image with a large viewing angl...

Journal: :Korean Journal of Materials Research 2007

2014
Ji-Ping Xu Rong-Jun Zhang Zhi-Hui Chen Zi-Yi Wang Fan Zhang Xiang Yu An-Quan Jiang Yu-Xiang Zheng Song-You Wang Liang-Yao Chen

The BiFeO3 (BFO) thin film was deposited by pulsed-laser deposition on SrRuO3 (SRO)-buffered (111) SrTiO3 (STO) substrate. X-ray diffraction pattern reveals a well-grown epitaxial BFO thin film. Atomic force microscopy study indicates that the BFO film is rather dense with a smooth surface. The ellipsometric spectra of the STO substrate, the SRO buffer layer, and the BFO thin film were measured...

2007
V. K. Sangwan D. R. Hines V. W. Ballarotto G. Esen M. S. Fuhrer E. D. Williams

Conditions for the transfer printing of patterned carbon nanotube (CNT) films, along with a Au-gate, a poly methylmethacrylate (PMMA) dielectric layer and Au source-drain electrodes have been developed for the fabrication of thin-film transistors on a polyethylene terephthalate (PET) substrate. Chemical vapor deposition (CVD) grown CNTs were patterned using a photolithographic method. Transfer ...

2013
Fa-Hsyang Chen Jim-Long Her Yu-Hsuan Shao Yasuhiro H Matsuda Tung-Ming Pan

In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs...

2010
Sven Schröder Angela Duparré Kevin Füchsel Norbert Kaiser Andreas Tünnermann James E. Harvey

The scattering properties of transparent conductive oxide (TCO) films into dielectric and semiconductor surrounding media are modeled and compared to experiment. The new approach is not only valid for smooth optical films but also for films with enhanced roughness in order to generate light trapping structures for thin film solar cells. ©2010 Optical Society of America. OCIS codes: (310.0310) t...

1999
D. N. Chigrin S. V. Gaponenko

A remarkable property of one-dimensional alldielectric periodic structures has recently been reported, namely a one-dimensional lattice can totally reflect electromagnetic wave of any polarization at all angles within a prescribed frequency region. Unlike their metallic counterpart, such all-dielectric omnidirectional mirrors are nearly free of loss at optical frequencies. Here we discuss the p...

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