نتایج جستجو برای: depth profiling
تعداد نتایج: 242779 فیلتر نتایج به سال:
Determination of the microscopic mineralogy of inclusion in an amygdaloidal pillow basalt by fs-LIMS
Depth profiling and atomic intensity correlation studies on mineralogical inclusion embedded in calcium carbonate phase using a miniature laser mass spectrometer are presented. The method allows the determination of complex phases.
Immune cells in the tumor microenvironment modulate cancer progression and are attractive therapeutic targets. Macrophages and T cells are key components of the microenvironment, yet their phenotypes and relationships in this ecosystem and to clinical outcomes are ill defined. We used mass cytometry with extensive antibody panels to perform in-depth immune profiling of samples from 73 clear cel...
Abstract: Photothermal radiometry is an infrared remote sensing technique that has been used for skin and skin appendages research, in the areas of skin hydration, hydration gradient, skin hydration depth profiling, skin thickness measurements, skin pigmentation measurements, effect of topically applied substances, transdermal drug delivery, moisture content of bio-materials, membrane permeatio...
We report results of high-resolution sputter depth profiling of an alternating MgO/ZnO nanolayer stack grown by atomic layer deposition (ALD) of ≈5.5 nm per layer. We used an improved dual beam time-of-flight secondary ion mass spectrometer to measure (24)Mg(+) and (64)Zn(+) intensities as a function of sample depth. Analysis of depth profiles by the mixing-roughness-information model yields a ...
Depth profile analysis by high-resolution secondary ion mass spectrometry ~SIMS! can accurately determine C and Si concentrations within monolithic reflectors of vertical cavity surface-emitting lasers ~VCSELs!. These SIMS depth profiles are quantified to atomic concentrations using relative sensitivity factors and calibration standards, and are correlated to the laser characteristics. We compa...
Ultra-low-energy secondary ion mass spectrometry has been used to undertake a structural analysis of GaN-In(x)Ga(1-x)N (x approximately 0.25) quantum wells used in optoelectronic devices. The high resistivity of intrinsic GaN-In(x)Ga(1-x)N restricts the necessary electrical path between the analyzed area and the instrument ground potential resulting in surface charge accumulation. Consequently,...
The magnetic microstructure responsible for the metastable high resistance state of weakly coupled, as-prepared [Co(6nm)/Cu(6nm)]20 multilayers was analyzed using polarized neutron reflectivity (PNR) and scanning electron microscopy with polarization analysis (SEMPA). This paper focuses and expands on the SEMPA measurements. In multilayer structures such as these, SEMPA can be combined with ion...
Article history: Received 16 October 2014 Revised 5 March 2015 Accepted 6 March 2015 Available online 4 April 2015
The fitting program VEPFIT has been extended with applications running under the Microsoft Windows environment facilitating the input and output of the VEPFIT fitting module. We have exploited the Microsoft-Windowsm graphical users interface by making use of dialog windows, scrollbars, command buttons etc. The user communicates with the program simply by clicking and dragging with the mouse poi...
Laser-induced damage on optical surfaces is often associated with absorbing contaminants introduced by the polishing process. This is particularly the case for W optics. In the present study, secondmy ion mass spectroscopy (SIMS) was used to measure depth profiles of finishing-process contamination on fused silica surfaces. Contaminants detected include the major polishing compound components (...
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