نتایج جستجو برای: contact resistance
تعداد نتایج: 530879 فیلتر نتایج به سال:
For the first time, n-type few-layer MoS2 fieldeffect transistors (FETs) with graphene/Ti as the heterocontacts have been fabricated, showing more than 160-mA/mm drain current at 1-μm gate length with an ON-OFF current ratio of 107. The enhanced electrical characteristic is confirmed in a nearly 2.1 times improvement in ON-resistance and a 3.3 times improvement in contact resistance with hetero...
Ohmic and Schottky contacts are playing a major role in the field of ZnO based electronics device fabrication. It is seen that several works have been reported on metallization scheme, contacts with this semiconducting material. But, the thickness of semiconducting material and the choosing of substrate still remain imperfect and inefficient for advanced IC technology. To estimate contact resis...
The contact resistance between source/drain electrodes and semiconductor layer is an important parameter affecting electron transporting performance in the thin film transistor (TFT). In this work, we introduced a transparent and the solution prossable single-walled carbon nanotube (SWCNT)/Al-doped ZnO nano particle (AZO NP) bilayer electrodes showing low contact resistance with indium-oxide (I...
To determine whether poultry contact/consumption predicts colonization with antimicrobial-resistant Escherichia coli, 567 newly hospitalized patients and 100 vegetarians were assessed microbiologically and epidemiologically. Multivariable analysis showed that poultry contact/consumption, other dietary habits, and antimicrobial use did not significantly predict resistance. In contrast, foreign t...
Source/drain (S/D) series resistance components and device/process parameters contributing to series resistance are extensively analyzed using advanced model for future CMOS design and technology scaling into the nanometer regime. The total series resistance of a device is found to be very sensitive to the variations of the sidewall thickness, the doping concentration in the deep junction regio...
the objective of this research is characterizing the effect of nano-zinc oxide (nano-zno) dispersions on leach resistance and contact angle of beech wood (fagus orientalis lipsky). the beech wood was cut into standard dimension, and oven dried after treating with nano-zno solution, based on immersion method. three treating nano-zno solution levels: (o, 20000 and 40000 ppm), and two thermal trea...
Silicon nanowire (SiNW) based thermoelectric device (TED) has potential applications in areas such as chip level cooling/ energy harvesting. It is a great challenge however, to assemble an efficient device with these SiNW. The presence of parasitic in the form of interfacial electrical resistance will have a significant impact on the performance of the TED. In this work, we explore the effect o...
The cooling capacity, efficiency and cooling flux for a single stage thermoelectric cooler, as part of a multistage cooler, is analyzed in this study. The Lagrange Multiplier method is used to develop nonlinear algebraic equations for the optimum condition for different objective functions. The analysis includes the effect of heat leak, thermal boundary resistances with thermal reservoirs and t...
ین پایان نامه با هدف سنتز و شناسایی چهار نوع از نانو ذرات آغاز می شود. نانو ذرات آلوم اکسان از واکنش بوهمیت و کربوکسیلیک اسید مربوطه حاصل شدند. هدف از سنتز این نوع نانو ذرات ساخت غشاهای عامل دار شده با خاصیت آب دوستی و انتخاب پذیری جهت جداسازی روغن از مخلوط های آب و روغن، می باشد. tg-dta، ftir، sem، tem، uv/vis spectrophotometer، digital camera،contact angle measurement goniometer، ultrasonic b...
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