Photons absorbed in silicon produce electron–hole pairs, which can cause impact ionization and quantum yield larger than one. Reliable determination of at low charge-carrier energies (<4 eV) has been challenging because photon losses due to reflectance recombination affect the resulting photocurrent. Here, we present how measurement this fundamental characteristic crystals be improved en...

We considered the problem of localization electrons and holes taking for instance pyramidal InAs quantum dots in GaAs. The mechanics was solved localizing potential into account geometry, chemical composition built-in fields mechanical stress strain. found that strongest both types charge carriers can be achieved if ratio pyramid height to its base is about 0.2. Keywords: dots, elastic strain, ...