نتایج جستجو برای: bulk carriers

تعداد نتایج: 121387  

Journal: :International journal of engineering and applied sciences 2021

The Bosphorus is a heritage from the past to present with its natural, historical and cultural features. Vessels passing through Bosphorus, which narrow waterway, create risk in Istanbul Strait. Thousands of vessels carrying dangerous cargoes pass every year. In this study, changes cargos carried by these number over years are examined. It seen that approximately 44000 per year have passed cons...

2004

We report on the electrical and optical characteristics of silicon light-emitting pn diodes. The diodes are prepared by ion implantation of boron at high doses and subsequent hightemperature annealing. Under forward bias, the diodes emit infrared electroluminescence closely below the band gap of bulk Si. We present a rate-equation model for bound excitons, free excitons and free carriers which ...

Journal: :Nano letters 2006
Yu-Ming Lin Joerg Appenzeller Joachim Knoch Zhihong Chen Phaedon Avouris

We present a systematic study on low-frequency current fluctuations of nanodevices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms, carrier types (electrons vs holes), and channel lengths, we show that the 1/f fluctuation level in semiconducting nanotubes is correlated to the total number of tra...

Journal: :Journal of physics. Condensed matter : an Institute of Physics journal 2009
Udai Raj Singh S Chaudhuri R C Budhani Anjan K Gupta

The electronic density of states (DOS) of La(0.625)Ca(0.375)MnO(3) (LCMO) strain-free epitaxial thin films with an insulator-metal transition temperature (T(IM)) of 250 K was probed using variable-temperature scanning tunneling microscopy and spectroscopy. We find a depression in the DOS with a finite zero bias conductance (ZBC) signifying a pseudogap in the 78-310 K temperature range. With coo...

2007
ARGYRIOS VARONIDES ROBERT SPALLETTA ANDREW BERGER

– We derive excess carrier populations in quantum wells, embedded in the intrinsic region of p-i-n solar cells. In the process of the analysis, we (a) solve for photo-generated carriers in quantum wells and (b) determine explicit dependence on incident solar wavelength. We include in the computations the existence of optical gaps near 1eV or wavelengths in the near infrared, so that our complet...

2013
Arsen V. Subashiev Oleg Semyonov Zhichao Chen Serge Luryi

We study the spatial distribution of minority carriers arising from their anomalous photon-assisted diffusion upon photo-excitation at an edge of n-InP slab for temperatures ranging from 300K to 78K. The experiment provides a realization of the “Lévy flight” random walk of holes, in which the Lévy distribution index γ is controlled by the temperature. We show that the variation γ(T ) is close t...

Journal: :Energy & environmental materials 2022

Van der Waals (VDW) heterojunctions in a 2D/2D contact provide the highest area for separation and transfer of charge carriers. In this work, top-down strategy with gas erosion process was employed to fabricate carbon nitride VDW heterojunction (g-C3N4) carbon-rich nitride. The created 2D semiconducting channel structure exhibits enhanced electric field exposure radiation absorption, which faci...

2014
Li Wang

Spatial resolution of optically addressed spatial light modulators (OASLMS) is degraded by several different transfer processes in these devices. We have developed a general transient charge transport model to calculate and simulate the resolution limits of OASLMs due to the following charge spreading mechanisms during the transfer process in which the input image is converted into a particular...

1992
Alexandros V. Gerbessiotis Leslie G. Valiant

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