نتایج جستجو برای: bulk carriers
تعداد نتایج: 121387 فیلتر نتایج به سال:
The Bosphorus is a heritage from the past to present with its natural, historical and cultural features. Vessels passing through Bosphorus, which narrow waterway, create risk in Istanbul Strait. Thousands of vessels carrying dangerous cargoes pass every year. In this study, changes cargos carried by these number over years are examined. It seen that approximately 44000 per year have passed cons...
We report on the electrical and optical characteristics of silicon light-emitting pn diodes. The diodes are prepared by ion implantation of boron at high doses and subsequent hightemperature annealing. Under forward bias, the diodes emit infrared electroluminescence closely below the band gap of bulk Si. We present a rate-equation model for bound excitons, free excitons and free carriers which ...
We present a systematic study on low-frequency current fluctuations of nanodevices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms, carrier types (electrons vs holes), and channel lengths, we show that the 1/f fluctuation level in semiconducting nanotubes is correlated to the total number of tra...
The electronic density of states (DOS) of La(0.625)Ca(0.375)MnO(3) (LCMO) strain-free epitaxial thin films with an insulator-metal transition temperature (T(IM)) of 250 K was probed using variable-temperature scanning tunneling microscopy and spectroscopy. We find a depression in the DOS with a finite zero bias conductance (ZBC) signifying a pseudogap in the 78-310 K temperature range. With coo...
– We derive excess carrier populations in quantum wells, embedded in the intrinsic region of p-i-n solar cells. In the process of the analysis, we (a) solve for photo-generated carriers in quantum wells and (b) determine explicit dependence on incident solar wavelength. We include in the computations the existence of optical gaps near 1eV or wavelengths in the near infrared, so that our complet...
We study the spatial distribution of minority carriers arising from their anomalous photon-assisted diffusion upon photo-excitation at an edge of n-InP slab for temperatures ranging from 300K to 78K. The experiment provides a realization of the “Lévy flight” random walk of holes, in which the Lévy distribution index γ is controlled by the temperature. We show that the variation γ(T ) is close t...
Van der Waals (VDW) heterojunctions in a 2D/2D contact provide the highest area for separation and transfer of charge carriers. In this work, top-down strategy with gas erosion process was employed to fabricate carbon nitride VDW heterojunction (g-C3N4) carbon-rich nitride. The created 2D semiconducting channel structure exhibits enhanced electric field exposure radiation absorption, which faci...
Spatial resolution of optically addressed spatial light modulators (OASLMS) is degraded by several different transfer processes in these devices. We have developed a general transient charge transport model to calculate and simulate the resolution limits of OASLMs due to the following charge spreading mechanisms during the transfer process in which the input image is converted into a particular...
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